The figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0.NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6VPMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V(c) NMOS: VGS = 0.6V , VDS = 0.1V . PMOS: VGS = −2.5V , VDS = −0.7V . The figure displays NMOS and PMOS devices with their respective drain, source, and gate terminals labeled. The task is to determine the mode of operation (such as saturation, velocity saturation, channel pinch-off, linear, or cutoff) and calculate the drain current \( I_D \) for each biasing configuration based on the provided transistor parameters. Assume \( (W/L) = 1 \) and \( V_{SB} = 0 \).**Transistor Parameters:**- **NMOS:** - \( k'_n = 115 \mu A/V^2 \) - \( V_{T0} = 0.43 V \) - \( \lambda = 0.06 V^{-1} \) - \( V_{DSAT} = 0.6 V \)- **PMOS:** - \( k'_p = -30 \mu A/V^2 \) - \( V_{T0} = -0.4 V \) - \( \lambda = -0.1 V^{-1} \) - \( V_{DSAT} = -1.0 V \)**Diagrams:**1. **NMOS Diagram:** - Depicts a typical NMOS transistor with its gate (G), source (S), and drain (D) terminals. The direction of the drain current \( I_D \) is shown flowing from the drain to the source.2. **PMOS Diagram:** - Illustrates a PMOS transistor with the gate (G), source (S), and drain (D) terminals. The direction of the drain current \( I_D \) is indicated flowing from the source to the drain, opposite to the NMOS.These diagrams are crucial for understanding the operation and analysis of NMOS and PMOS devices under different electrical conditions.

Part (c): NMOS: The condition for the saturation is given by: VDS≥VGS-VT0 Determine the value of the right-hand side term, VGS-VT0=-2.5 V--0.40 V=2.5 V-0.40 V=2.1 V Compare the left-hand side term with the right-hand side term, VDS=0.1 V,VDS≤VGS-VT0 From the above comparison, it is seen that the saturation condition is not satisfied. Therefore, NMOS is operated in the triode region.The drain current is calculated by the following expression, ID==kn'WLVGS-VT0VDS-VDS22=-115 μA/V210.6 V-0.43 V0.1 V-0.1 V22=3.795 μAPMOS: The condition for the saturation is given by: VDS≥VGS-VT0 Determine the value of the right-hand side term, VGS-VT0=0.6 V-0.43 V=0.17 V Compare the left-hand side term with the right-hand side term, VDS=-0.7 VVDS=0.7 V,VDS≤VGS-VT0 From the above comparison, it is seen that the saturation condition is not satisfied. Therefore, PMOS is also operated in the triode region.The drain current is calculated by the following expression, ID==kn'WLVGS-VT0VDS-VDS22=--30 μA/V212.5 V-0.4 V0.7 V-0.7 V22=36.75 μA