5. For the sample whose energy band diagram is shown in the Figure below:10.15 eVF850 μηa.Find the effective electric field for electrons.b. Find the effective electric field for holes.c.Sketch the carrier concentrations.d. Indicate the directions of each of the following:Hole diffusionHole diffusion currenti.11.111.Hole driftiv.Hole drift currentV.Electron diffusionvi. Electron diffusion currentvii.Electron driftviii.Electron drift currentix.Electric field for electronsx.Electric field for holes0.3 eVtEcEfEEv

a.−17.64v/cmb. 17.64v/cmc and d.drawn the sketch of carrier concentrations and mentioned the…

Answered: 5. For the sample whose energy band…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

In a p-type silicone sample, the hole concentration is 2.25x10^15/cm^3. If the uncontributing carrier concentration is 1.5x10^10/cm^3, what is the electron concentration?
Question 1 Not yet answered Marked out of 1.00 P Flag question Forward current in a semiconductor diode a. Linearly increases with forward voltage b. Linearly decreases with forward voltage c. Exponentially increases with forward voltage d. Exponentially decreases with forward voltage
A 1N4748A zener diode has a ZZ of 23 Ω. Taking the data from the datasheet VZ = 22 V with a test current, IZ, of 11.5 mA. What is the voltage across the zener terminals when the current is 6 mA? When the current is 20 mA? Make the representation of the values by means of their curve characteristic.
A constant diffusion current of electrons is established through a silicon semiconductor material. The value of current density is Jn= –0.8 A/cm2. The electron concentration at x=0 is n(0)=1.5x1015 cm–3. The diffusion constant of electrons and holes are 35 and 14 cm2/s, respectively . Determine the hole drift current density
For a germanium diode, calculate the current at room temperature if the forward voltage, V = 0.3 V and the reverse saturation current I, = 100 n.A. (A) 10.8 PA (B) 34.24 UA 11.79 mA (D) none
In diodes, the space charge due to immobile ions in the depletion region establishes an electric field that opposes carrier diffusion. A) True B False Semiconductor devices with millions of transistors in a single package are called a/an Blank 1 circuits. Blank 1 Add your answer When a potential difference is applied across n-type material, the holes flow from positive to negative. A) True B False
5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.
i. A silicon sample is uniformly doped p-type with NA=10/cm. At T=0 K, what are the equilibrium electron and hole concentrations? Mark clearly the correct directions of electron and hole flow directions and currents in the presence of an electric field and concentration gradients as shown below. ii. Hole Flow (Diffusion) Hole Flow (Drift) E(x) Hole Current (Diffusion) Hole Current (Drift) Electron Flow (Diffusion) Electron Flow (Drift) Electron Current (Diffusion) Electron Current (Drift) n(x) p(x) ii. An n-type semiconductor sample is continuously and uniformly excited (optically) at low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of goo and tp. Do not derive this expression using the continuity or diffusion equations. Show complete work.
Draw the V-I characteristic curve of a Ge based Zener diode with Zener breakdown voltage (?z=5 ?). Indicate three different regions of the curve. Subject: Electronic devices
i. A silicon sample is uniformly doped p-type with NA=1015/cm³. At T=0 K, what are the equilibrium electron and hole concentrations? ii. Mark clearly the correct directions of electron and hole flow directions and currents in the presence of an electric field and concentration gradients as shown below. Hole Flow (Diffusion) Hole Flow (Drift) Hole Current (Diffusion) Hole Current (Drift) Electron Flow (Diffusion) Electron Flow (Drift) Electron Current (Diffusion) Electron Current (Drift) E(x) n(x) p(x) An n-type semiconductor sample is continuously and uniformly excited (optically) at ii. low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of gop and Tp. Do not derive this expression using the continuity or diffusion equations. Show complete work.

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