5. An intrinsic semiconductor has resistivity of 1x105 ohm-cm at 7= 300 K and has μ= 4000 andμg = 1000 cm²/V-s. Donor and acceptor atoms are added with density of 2x1016 cm³ and 1x1016 cm³, respectively. Assume that the carrier mobilities do not change with the change of doping density, determine the hole current density and the total current density if the applied electric field is 100 mV/cm. (20 pts)

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5. An intrinsic semiconductor has resistivity of 1x105 ohm-cm at T= 300 K and has pn =
4000 and Mp = 1000 cm2/V-s. Donor and acceptor atoms are added with density of
2x1016 cm3 and 1x1016 cm3, respectively. Assume that the carrier mobilities do not
change with the change of doping density, determine the hole current density and
the total current density if the applied electric field is 100 mV/cm. (20 pts)

5. An intrinsic semiconductor has resistivity of 1x105 ohm-cm at 7= 300 K and has μ=
4000 andμg = 1000 cm²/V-s. Donor and acceptor atoms are added with density of
2x1016 cm³ and 1x1016 cm³, respectively. Assume that the carrier mobilities do not
change with the change of doping density, determine the hole current density and
the total current density if the applied electric field is 100 mV/cm. (20 pts)
Transcribed Image Text:5. An intrinsic semiconductor has resistivity of 1x105 ohm-cm at 7= 300 K and has μ= 4000 andμg = 1000 cm²/V-s. Donor and acceptor atoms are added with density of 2x1016 cm³ and 1x1016 cm³, respectively. Assume that the carrier mobilities do not change with the change of doping density, determine the hole current density and the total current density if the applied electric field is 100 mV/cm. (20 pts)
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