See both images to understand 4. The equilibrium and steady state conditions before and after illumination of a semiconductor arecharacterized by the energy band diagrams shown in the figure. T = 300K, n₁ = 10¹%/cm³, μ₁ = 1345 cm²/V-sec, and up 458 cm²/V-sec. From the information provided, determinea) no and po the equilibrium carrier concentrationsb) n and p under steady state conditionsc) NDd) What is the resistivity of the semiconductor before and ager illumination? EcEF0.3 eVEiEvBeforeEcFN0.318 eVE₁I0.3 eVFPEvAfter

Answered: 4. The equilibrium and steady state…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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The specific capacitance in F/g can be estimated by using both cyclic voltammetry curves atdifferent voltage scan rate and Galvanostatic charge-discharge curves. The following graphshows the charge-discharge curves of a typical MnO2 pseudocapacitive electrode. There is acharge drop in the voltage at the onset of the discharge curve (one such drop is denoted bydeltaV2). What is the reason behind it?
Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junction
Please Help ASAP!!! Just do A-C
A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.
please draw band diagram correctly
The energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e, the Fermi energy level Ef is constant) is shown in the figure. The valence band E, is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is A. p-type Ef Ev z = 0 z = L If the charge of an electron is q, then the magnitude of the electric field developed inside this semiconductor bar is
When a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
B5
Assume that an n type semiconductor is uniformly illuminates, producing a uniform generation rate G. Show that in steady state the change in the semiconductor excess conductivity is given by Ao gun p G
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Draw the schematic diagram showing the energy level alignment of metal-semiconductor and semiconductor-semiconductor junctions after contact under thermal equilibrium for the following cases. Note P = work function % = electron affinity EG = band gap Ec = conduction band Ey = valence band EF = fermi level 1. semiconductor EVAC Metal Os Xs Ec Egs ErM Ey Before contact 2. semiconductor EVAC Metal Xs OM Ec EyM Eps Ey Before contact 3. semiconductor EVAC Metal OM Ec EFM Eps Ev Before contact Electron energy Electron energy Electron energy

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