4. An alien named Iofi sneezes onto the wafer, doping it uniformly with an additional NA = 10°/cm³.(a) What is now the majority carrier of the wafer?(b) How many carrier electrons are there in the wafer in total?(c) How many carrier holes are there in the wafer in total?(d) Is the carrier now n-type or p-type? Silicon Wafer5cm1cmYou are given a 1mm × 1cm × 5cm silicon wafer, shown above. The room is at 300K, and you may assumetotal ionization.

Given a silicon wafer : The silicon wafer is uniformly doped with additional NA=103 / cm3. a) We…

Answered: 4. An alien named Iofi sneezes onto the…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

In a p-type silicone sample, the hole concentration is 2.25x10^15/cm^3. If the uncontributing carrier concentration is 1.5x10^10/cm^3, what is the electron concentration?
In an n-type silicon sample, the donor concentration at 300 K is 5 x 1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms. The electron and hole concentration in the sample will be: [Assume n₁ = 1.45 x 1010/cm³]
Q2:Calculate holes and electrons concentration in compensated silicon p-type sample. If T=300 K, N=3×102/m³, Na=1022/m³. Assume that n=1.5×1016/m³.
Which of the following option is FALSE for n-type semiconductor materials? Lütfen birini seçin: O A. None O B. The band gap between the conduction band and the valance band is comparatively less than that of undoped semicondctor materials. O C. The number of carrier electrons is slighlty less than that of intrinsic semiconductor materials. O D. The number of conduction band electrons increases. O E. All O F. Since the number of mobile electrons get larger during the doping process, the electrons become the majority carriers.
A particular semiconductor is doped at ND=8xl0l6 cm-3 and NA=2xl0l6 cm-3 and ni=1010 cm-3. Assume complete ionization. Determine thermal equlibrium concentrations of majority- and minority-carrier concentrations. Lütfen birini seçin: Majority carrier; no= 8xl0l6 cm-3 Minority carrier; po = 1250 cm-3 Majority carrier; no = 6xl0l6 cm-3 Minority carrier; po = 1666 cm-3 Majority carrier; no= 2xl0l6 cm-3 Minority carrier; po = 5000 cm-3
5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.
For a non-uniformly doped semiconductor sample, the sheet- 1 resistance is given by: R =- aju(x)n(x)dx For the three n-type thin layers on a p-type substrate shown in the Figure, determine Rh- (n=1250 cm²/V/s, q=1.6 × 10-¹⁹ C) n (cm-³) 1016 10¹5 0 n (b) (a) (c) 104 P x (cm)
Con sider Om= 4. SSV and n ty pe silicon doped to No = 10" cm? at Sook. Given Nc csi)=28X10'9 Cm? and X = 4.01, Calculate; in) the depletion width ♡ the maximum junction electric field. a contact between tung sten with work f unction %3D %3D
For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm?, and resistance of 2502. Calculate the exact number of the majority and the minority carriers (in electrons/m?). Also, calculate the number of acceptor atoms (in atoms/m') if the intrinsic carrier is 2×1020 electrons/m. Given the mobility for the electrons (u-0.4m?/V.s) and for the holes (H-0.2m/V.s) 1.23e22, 3.2e16, 1.25e22 O 1.25e22, 3.2e18, 1.23e22 O 1.23e22, 3e18, 1.23e22 O 1.25e22, 3.2e18, 1.25e22
What is the main purpose of doping in semiconductor materials? Lütfen birini seçin: O A. In order to improve the conduction characteristics of semiconductor materials. O B. All O C. For making the materials cheaper, since semiconductor materials are quite expensive by their own. O D. To make semiconductor materials more resistive so that they can be used in electrical circuits. O E. In order to enhance the conduction band electron velocity. O F. None

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