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3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the figure below starting from a <100> bare silicon substrate (the cross section flow should include fabrication of two micropillars). If you are using photolithography, please provide cross-section of your optical masks with clear indication of transparent and opaque region based on the type of your photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The diameter and height of each pillar is 5 μm and 10 um, respectively. The spacing between the pillars is 20 μm. You are only allowed use one of the given processes below for your process flow. PECVD Sputtering Electroplating Thermal oxidation Photolithography (photoresist thickness available from 1.5 um to 13um) DRIE RIE Gold Silicon Dioxide Silicon

3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the figure below starting from a <100> bare silicon substrate (the cross section flow should include fabrication of two micropillars). If you are using photolithography, please provide cross-section of your optical masks with clear indication of transparent and opaque region based on the type of your photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The diameter and height of each pillar is 5 μm and 10 um, respectively. The spacing between the pillars is 20 μm. You are only allowed use one of the given processes below for your process flow. PECVD Sputtering Electroplating Thermal oxidation Photolithography (photoresist thickness available from 1.5 um to 13um) DRIE RIE Gold Silicon Dioxide Silicon

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the figure below starting from a <100> bare silicon substrate (the cross section flow should include fabrication of two micropillars). If you are using photolithography, please provide cross-section of your optical masks with clear indication of transparent and opaque region based on the type of your photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The diameter and height of each pillar is 5 µm and 10 um, respectively. The spacing between the pillars is 20 μm. You are only allowed use one of the given processes below for your process flow. PECVD Sputtering Electroplating Thermal oxidation Photolithography (photoresist thickness available from 1.5 um to 13um) DRIE RIE Gold Silicon Dioxide Silicon
Transcribed Image Text:3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the figure below starting from a <100> bare silicon substrate (the cross section flow should include fabrication of two micropillars). If you are using photolithography, please provide cross-section of your optical masks with clear indication of transparent and opaque region based on the type of your photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The diameter and height of each pillar is 5 µm and 10 um, respectively. The spacing between the pillars is 20 μm. You are only allowed use one of the given processes below for your process flow. PECVD Sputtering Electroplating Thermal oxidation Photolithography (photoresist thickness available from 1.5 um to 13um) DRIE RIE Gold Silicon Dioxide Silicon
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