2) If the temperature dependence of the energy band gap for InAs material is given by Eg= 0.426 3.16 x 10-72 (93+T)¹ eV and the density-of-states effective masses for electrons and holes are given, respectively. - by m 0.002m0 and m;= 0.4m0, Find the intrinsic carrier density, ,, at 400°C. 3) Consider a gold-doped silicon sample Thera

2) If the temperature dependence of the energy band gap for InAs material is given by Eg= 0.426 3.16 x 10-72 (93+T)¹ eV and the density-of-states effective masses for electrons and holes are given, respectively. - by m 0.002m0 and m;= 0.4m0, Find the intrinsic carrier density, ,, at 400°C. 3) Consider a gold-doped silicon sample Thera