Answered: 2) If the temperature dependence of the… | bartleby

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2) If the temperature dependence of the energy band gap for InAs material is given by
Eg 0.426 3.16 x 10-72 (93+ T)¹ eV
and the density-of-states effective masses for electrons and holes are given, respectively.
0.002m0 and m = 0.4m0, Find the intrinsic carrier density, n,, at 400°C.
3) Consider a gold-doped silicon sample Thera
by m
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