The function F(E) shown here is 10 T. E-Mo 0 KT -10 0.5 → F(E) O a. the Fermi function, fo (E) Ob. 1-fo(E) Oc. 1 + fo(E) Od. KT Ofo/OE Oe.- kT Ofo/OE
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- Q3 Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1016 cm-3 and donor doping concentrations of 1015 cm 3. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n; = 1.5 x 1010 cm-3 Eg = 1.035 x 10-12F/cm Your answerGiven that the Fermi energy Ef(0) for silver is 5.51 eV, the Fermi temperature in (X 104 K) is а. 3.2 b. 6.4 С. 8.8 d. 8PLEASE HELP WITH THIS QUESTION
- helpQ3: In a solid consider the energy level lying (0.11leV) below the Fermi level. Find the probability of this level not being occupied by the electron at room temperature? k= 8.62 x 10-5eV/°KA metal has 5.89 x 1022 conduction electron per cubic meter then its Fermi energy is (h-bar)-1.05x10-34 J.S, me =9.11 x 10 31 kg) Select one: O a. 3 *10-20 J O b. 10.26*10-20 J c. 8.84*10-19 J O d. 7*10-19 J
- The cell membrane has ion channels that can exist in two states, open or closed. When they are open, they let Na+ ions through. The energy of the open state is 4*10^-20 J. higher than the state of the closed channel. a. What proportion of the ion channels are open at a temperature of 20 C? b. How high should the temperature be so that 75% of the channels are open? Don't use Chat GPT otherwise I will report from bartleby.A system with 3 (three) indistinguishable particles has five energy states: E1 = 0, E2 = E, E3 = 2E, E4 = 3E, Es = 4E. Determine the possible formation if it satisfies: a. Fermi Direct Statistics?3. (a) Use the two-dimensional density of states expression P(e) = Am/2nh² to obtain the chemical potential m of a non-interacting two-dimensional Fermi gas of N femions occupying an area A at temperature T = 0 K. (b) For T > 0 K, show that the chemical potential is given to a good approximation by H= 8p- kgTln (1+ exp (-)).
- 4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.ON -3 e n DF n -M + CLJ F tane at Extrincic Semiconductor has Eg = 1 cv and holes a 2012 AT 01 X 8.) 14 3 18 300K = 10%/m² and electrons density at 300k = 10" /m³ determine fermi level at 300k and 500k K: boltzman's constant = 1.3 +10-22 jik