EBK PHYSICS FOR SCIENTISTS AND ENGINEER
6th Edition
ISBN: 9781319321710
Author: Mosca
Publisher: VST
expand_more
expand_more
format_list_bulleted
Question
Chapter 38, Problem 17P
To determine
The density of
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
Pls help ASAP. Pls show all work annd circle the final answer.
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T= 300 K:
N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The acceptor concentration?
Chapter 38 Solutions
EBK PHYSICS FOR SCIENTISTS AND ENGINEER
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
Ch. 38 - Prob. 11PCh. 38 - Prob. 12PCh. 38 - Prob. 13PCh. 38 - Prob. 14PCh. 38 - Prob. 15PCh. 38 - Prob. 16PCh. 38 - Prob. 17PCh. 38 - Prob. 18PCh. 38 - Prob. 19PCh. 38 - Prob. 20PCh. 38 - Prob. 21PCh. 38 - Prob. 22PCh. 38 - Prob. 23PCh. 38 - Prob. 24PCh. 38 - Prob. 25PCh. 38 - Prob. 26PCh. 38 - Prob. 27PCh. 38 - Prob. 28PCh. 38 - Prob. 29PCh. 38 - Prob. 30PCh. 38 - Prob. 31PCh. 38 - Prob. 32PCh. 38 - Prob. 33PCh. 38 - Prob. 34PCh. 38 - Prob. 35PCh. 38 - Prob. 36PCh. 38 - Prob. 37PCh. 38 - Prob. 38PCh. 38 - Prob. 39PCh. 38 - Prob. 40PCh. 38 - Prob. 41PCh. 38 - Prob. 42PCh. 38 - Prob. 43PCh. 38 - Prob. 44PCh. 38 - Prob. 45PCh. 38 - Prob. 46PCh. 38 - Prob. 47PCh. 38 - Prob. 48PCh. 38 - Prob. 49PCh. 38 - Prob. 50PCh. 38 - Prob. 51PCh. 38 - Prob. 52PCh. 38 - Prob. 53PCh. 38 - Prob. 54PCh. 38 - Prob. 55PCh. 38 - Prob. 56PCh. 38 - Prob. 57PCh. 38 - Prob. 58PCh. 38 - Prob. 59PCh. 38 - Prob. 60PCh. 38 - Prob. 61PCh. 38 - Prob. 62PCh. 38 - Prob. 63PCh. 38 - Prob. 64PCh. 38 - Prob. 65PCh. 38 - Prob. 66PCh. 38 - Prob. 67PCh. 38 - Prob. 68PCh. 38 - Prob. 69PCh. 38 - Prob. 70PCh. 38 - Prob. 71PCh. 38 - Prob. 72PCh. 38 - Prob. 73PCh. 38 - Prob. 74PCh. 38 - Prob. 75PCh. 38 - Prob. 76P
Knowledge Booster
Similar questions
- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardThe force of attraction between a divalen cation and a divalen anion is 2.60 x 10^-8 Newtons. If the ionic radius of the cation is 0.067 nm, waht is the anion radius?arrow_forward
- Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardThe intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.arrow_forwardThe parameters o and & in Lennard-Jones potential in Argon (Ar) crystals are o = 3.40 x 10-10 m and ɛ = 1.67 x 10-21 J. The lattice sums for the BCC (body-centered cubic) structures are E C" Pī12 = 9.11418, ECC Pī = 12.2533, and the lattice sums for the FCC structures are 2CC Pī12 = potential, calculate the equilibrium separation and cohesive energies (in unit of electron voltage or eV) for BCC and FCC configurations. -6 %3| 12.13188, ECC Pi = 14.45392. Using the Lennard-Jones %3Darrow_forward
- Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou aoarrow_forwardQ1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.arrow_forward6.31 A spherical shell has inner and outer radii a and b, respectively. Assume that the shell has a uniform conductivity o and that it has copper electrodes plated on the inner and outer surfaces. Show that %3D 477O aarrow_forward
- Silicon has a conductivity of 5×10-4 (Q.m)-1 when pure. How many arsenic atoms/m3 are required so that the conductivity of 200 (Q .m)-1. The mobility of electrons is O.13 (m2/V. Sec), mobility of holes is 0.05(m2/V.Sec) O 2.4038*10^16 /m-3 O 9.6153*10^21/m-3 O 4*10^5 /m-3 O 9.4089*10^5 /m-3 O other:arrow_forwardVolume 2. a) The intrinsic carrier concentration in GaAs at 300 K is 1.8 x 106 cm³. What is the carrier concentration in fm³ at this temperature? b) The mobility of holes in GaAs at 300 K is 400 cm²/V-s. What is the mobility in m²/V-s?arrow_forwardIn a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax