
Concept explainers
In an attempt to escape his island, Gilligan builds a raft and sets to sea. The wind shifts a great deal during the day, and he is blown along the following straight lines: 2.50 km 45.0° north of west; then 4.70 km 60.0° south of east; then 1.30 km 25.0° south of west; then 5.10 km straight east; then 1.70 km 5.00° east of north; then 7.20 km 55.0° south of west; and finally 2.80 km 10.0° north of east. What is his final position relative to the island?

Trending nowThis is a popular solution!

Chapter 3 Solutions
College Physics
Additional Science Textbook Solutions
Campbell Biology: Concepts & Connections (9th Edition)
Applications and Investigations in Earth Science (9th Edition)
Chemistry: Structure and Properties (2nd Edition)
Microbiology with Diseases by Body System (5th Edition)
College Physics: A Strategic Approach (3rd Edition)
Campbell Essential Biology (7th Edition)
- From this question and answer can you explain how get (0,0,5) and (5,0,,0) and can you teach me how to solve thisarrow_forwardCan you solve this 2 question and teach me using ( engineer method formula)arrow_forward11. If all three collisions in the figure below are totally inelastic, which brings the car of mass (m) on the left to a halt? I m II III m m ע ע ע brick wall 0.5v 2m 2v 0.5m A. I B. II C. III D. I and II E. II and III F. I and III G. I, II and III (all of them)arrow_forward
- How can you tell which vowel is being produced here ( “ee,” “ah,” or “oo”)? Also, how would you be able to tell for the other vowels?arrow_forwardYou want to fabricate a soft microfluidic chip like the one below. How would you go about fabricating this chip knowing that you are targeting a channel with a square cross-sectional profile of 200 μm by 200 μm. What materials and steps would you use and why? Disregard the process to form the inlet and outlet. Square Cross Sectionarrow_forward1. What are the key steps involved in the fabrication of a semiconductor device. 2. You are hired by a chip manufacturing company, and you are asked to prepare a silicon wafer with the pattern below. Describe the process you would use. High Aspect Ratio Trenches Undoped Si Wafer P-doped Si 3. You would like to deposit material within a high aspect ratio trench. What approach would you use and why? 4. A person is setting up a small clean room space to carry out an outreach activity to educate high school students about patterning using photolithography. They obtained a positive photoresist, a used spin coater, a high energy light lamp for exposure and ordered a plastic transparency mask with a pattern on it to reduce cost. Upon trying this set up multiple times they find that the full resist gets developed, and they are unable to transfer the pattern onto the resist. Help them troubleshoot and find out why pattern of transfer has not been successful. 5. You are given a composite…arrow_forward
- Two complex values are z1=8 + 8i, z2=15 + 7 i. z1∗ and z2∗ are the complex conjugate values. Any complex value can be expessed in the form of a+bi=reiθ. Find r and θ for (z1-z∗2)/z1+z2∗. Find r and θ for (z1−z2∗)z1z2∗ Please show all stepsarrow_forwardAn electromagnetic wave is traveling through vacuum in the positive x direction. Its electric field vector is given by E=E0sin(kx−ωt)j^,where j^ is the unit vector in the y direction. If B0 is the amplitude of the magnetic field vector, find the complete expression for the magnetic field vector B→ of the wave. What is the Poynting vector S(x,t), that is, the power per unit area associated with the electromagnetic wave described in the problem introduction? Give your answer in terms of some or all of the variables E0, B0, k, x, ω, t, and μ0. Specify the direction of the Poynting vector using the unit vectors i^, j^, and k^ as appropriate. Please explain all stepsarrow_forwardAnother worker is performing a task with an RWL of only 9 kg and is lifting 18 kg, giving him an LI of 2.0 (high risk). Questions:What is the primary issue according to NIOSH?Name two factors of the RWL that could be improved to reduce risk.If the horizontal distance is reduced from 50 cm to 30 cm, how does the HM change and what effect would it have?arrow_forward
- Two complex values are z1=8 + 8i, z2=15 + 7 i. z1∗ and z2∗ are the complex conjugate values. Any complex value can be expessed in the form of a+bi=reiθ. Find r and θ for z1z2∗. Find r and θ for z1/z2∗? Find r and θ for (z1−z2)∗/z1+z2∗. Find r and θ for (z1−z2)∗/z1z2∗ Please explain all steps, Thank youarrow_forwardAn ac series circuit consists of a voltage source of frequency 60 Hz and voltage amplitude V, a 505-Ω resistor, and a capacitor of capacitance 7.2 μF. What must be the source voltage amplitude V for the average electrical power consumed in the resistor to be 236 W? There is no inductance in the circuit.arrow_forwardAn L−R−C series circuit has R= 280 Ω . At the frequency of the source, the inductor has reactance XLL= 905 Ω and the capacitor has reactance XC= 485 Ω . The amplitude of the voltage across the inductor is 445 V . What is the amplitude of the voltage across the resistor and the capacitor? What is the voltage amplitude of the source? What is the rate at which the source is delivering electrical energy to the circuit?arrow_forward
- University Physics Volume 1PhysicsISBN:9781938168277Author:William Moebs, Samuel J. Ling, Jeff SannyPublisher:OpenStax - Rice UniversityPrinciples of Physics: A Calculus-Based TextPhysicsISBN:9781133104261Author:Raymond A. Serway, John W. JewettPublisher:Cengage LearningCollege PhysicsPhysicsISBN:9781938168000Author:Paul Peter Urone, Roger HinrichsPublisher:OpenStax College
- College PhysicsPhysicsISBN:9781285737027Author:Raymond A. Serway, Chris VuillePublisher:Cengage LearningPhysics for Scientists and Engineers, Technology ...PhysicsISBN:9781305116399Author:Raymond A. Serway, John W. JewettPublisher:Cengage LearningClassical Dynamics of Particles and SystemsPhysicsISBN:9780534408961Author:Stephen T. Thornton, Jerry B. MarionPublisher:Cengage Learning





