EBK MANUFACTURING ENGINEERING & TECHNOL
EBK MANUFACTURING ENGINEERING & TECHNOL
7th Edition
ISBN: 9780100793439
Author: KALPAKJIAN
Publisher: YUZU
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Chapter 28, Problem 23QLP
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The speed of a transistor is directly proportional to the width of its polysilicon gate; thus, a narrower gate results in a faster transistor and a wider gate in a slower transistor. Knowing that the manufacturing process has a certain difference for the gate width (say, ± 0.1 μm), how would a designer modify the gate size of a critical circuit in order to minimize its difference in speed? Are there any negative effects of this change?

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In figure A, the homogeneous rod of constant cross section is attached to unyielding supports. In figure B, a homogeneous bar with a cross-sectional area of 600 mm2 is attached to rigid supports. The bar carries the axial loads P1 = 20 kN and P2 = 60 kN, as shown.1. In figure A, derive the expression that calculates the reaction R1 in terms of P, and the given dimensions.2. In figure B, calculate the reaction (kN) at A.3. In figure B, calculate the maximum axial stress (MPa) in the rod.

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EBK MANUFACTURING ENGINEERING & TECHNOL

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