Modern Physics
3rd Edition
ISBN: 9781111794378
Author: Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher: Cengage Learning
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Chapter 12, Problem 9Q
To determine
Operation of p-n junction as a rectifier, a solar cell and a LED.
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The formula for the contact potential of a pn-junction diode is given by the formula:
NaNa
kT
- In
e
a) This contact potential ensures that the net current across the junction is zero. Which side is higher
in electron potential energy – the n or the p-side? Briefly explain your answer.
b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage
(V=0), there are two individual currents associated with electrons that add to zero (and two more
associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and
give their direction (for electrons).
c) Which of the two types of current is independent of Aøo? Briefly explain why.
Explain the Principle and Physics behind a Semiconductor p-n junction generator rectification system.
The formula for the contact potential of a pn-junction diode is given by the formula:
KT In (NaNa
a) This contact potential ensures that the net current across the junction is zero. Which side is higher
in electron potential energy – the n or the p-side? Briefly explain your answer.
b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage
(V=0), there are two individual currents associated with electrons that add to zero (and two more
associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and
give their direction (for electrons).
c) Which of the two types of current is independent of A¢o? Briefly explain why.
d) Arguing from the formula above for A$o, give a conceptual reason for the fact that germanium (Ge)
diodes have about half the contact potential compared to silicon (Si) diodes, all else being equal
(same doping concentrations and temperature). For a photodiode (PV cell), would you choose Si or…
Chapter 12 Solutions
Modern Physics
Ch. 12 - Prob. 1QCh. 12 - Prob. 2QCh. 12 - Prob. 3QCh. 12 - Prob. 4QCh. 12 - Prob. 5QCh. 12 - Prob. 6QCh. 12 - Prob. 7QCh. 12 - Prob. 8QCh. 12 - Prob. 9QCh. 12 - Prob. 11Q
Ch. 12 - Discuss the differences between crystalline...Ch. 12 - Prob. 13QCh. 12 - Prob. 15QCh. 12 - Prob. 16QCh. 12 - Prob. 17QCh. 12 - Prob. 19QCh. 12 - Prob. 21QCh. 12 - Prob. 22QCh. 12 - Prob. 1PCh. 12 - Prob. 2PCh. 12 - Prob. 3PCh. 12 - Prob. 4PCh. 12 - Prob. 5PCh. 12 - Prob. 6PCh. 12 - Prob. 7PCh. 12 - The Madelung constant for the NaCl structure may...Ch. 12 - Prob. 9PCh. 12 - Prob. 10PCh. 12 - Prob. 11PCh. 12 - Prob. 12PCh. 12 - Prob. 13PCh. 12 - Prob. 15PCh. 12 - Prob. 16PCh. 12 - Prob. 18PCh. 12 - Prob. 19PCh. 12 - Prob. 20PCh. 12 - Prob. 21PCh. 12 - Determine the current generated in a...Ch. 12 - Prob. 23PCh. 12 - Under pressure, liquid helium can solidify as each...Ch. 12 - Prob. 25P
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- A PN junction in series with a resistor of 100N and current of 100mA flows. If the voltage cross the junction is reversed instantaneously to 10V at t= 0, the reverse current that flows through the diode is a) 50 mA b) 75 mA c) 100 mA d) 200 mAarrow_forward1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).arrow_forwardwhat would happen if we replaced the PVC rod with a semiconductor material? What mechanisms could we employ to inject energy into the bound charges in the semiconductor to force it to act like more of a conductor?arrow_forward
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- = Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10arrow_forwardExplain Avalanche breakdown mechanism responsible for breakdown in p-n junction diode.arrow_forwardIs the phenomenon of radiative recombination exclusive to direct-gap semiconductors? If yes, please explain why it cannot occur in indirect-gap semiconductors. If not, please explain how it can occur in indirect gap semiconductors if it can.arrow_forward
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