Modern Physics
3rd Edition
ISBN: 9781111794378
Author: Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher: Cengage Learning
expand_more
expand_more
format_list_bulleted
Question
Chapter 12, Problem 17Q
To determine
The necessity of at least 3 levels for lasing action to occur.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
(Electroplating)
A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s.
V = CIt
V = ECIt
d =
V
A
Typical cathode efficiencies in electroplating and values of plating constant C.
Compiled from [18].
Plate Metal Electrolyte
Cadmium (2) Cyanide
Chromium (3) Chromium-acid-sulfate
Copper (1)
Gold (1)
Nickel (2)
Silver (1)
Tin (4)
Zinc (2)
Cyanide
Cyanide
Acid sulfate
Cyanide
Acid sulfate
Chloride
Plating Constant ca
Cathode Efficiency % mm³/amp-s (in³/amp-min)
6.73 × 10-²
(2.47 × 10-4)
X
2.50 × 10-2
(0.92 × 10-4)
7.35 x 10-2
10.6 x 10-²
3.42 x 10-2
(2.69 × 10-4)
(3.87 × 10-4)
(1.25 × 10-4)
10.7 x 10-2
(3.90 × 10-4)
4.21 x 10-2
(1.54 × 10-4)
4.75 × 10-2
(1.74 x 10-4)
90
15
98
80
95
100
90
95
¹Most common valence given in parentheses (); this is the value assumed in determining…
Consider a molecule that can be in one of two different conformation states A or B. These states are two different arrangements of the atoms: e.g., in state B, one part of the molecule could be rotated about a bond
with respect to the rest of the molecule. Assume the energies of states A and B are 4e-21 and 8e-21 J respectively. At room temperature, T = 298 K, what is the relative likelihood of the molecule being found in
state B vs state A? 37.8
Submit Answer Incorrect. Tries 2/3 Previous Tries
If the temperature decreases by 25 K to T = 273 K, what is the relative likelihood of the molecule being found in state B vs state A? 34.58
Submit Answer Incorrect. Tries 1/3 Previous Tries
If the temperature increases by 100 K to T = 398 K, what is the relative likelihood of the molecule being found in state B vs state A?
Submit Answer Tries 0/3
An ideal rectifying contact is formed by
depositing gold on n-type silicon doped at
1015 cm-3. At T= 300 K, determine the
width of the depletion region.
W = 9.540 X 10-4 cm
W = 2.244 X 10-4 cm
W = 1.033 X 10-4 cm
W = 4.151 X 10-4 cm
Chapter 12 Solutions
Modern Physics
Ch. 12 - Prob. 1QCh. 12 - Prob. 2QCh. 12 - Prob. 3QCh. 12 - Prob. 4QCh. 12 - Prob. 5QCh. 12 - Prob. 6QCh. 12 - Prob. 7QCh. 12 - Prob. 8QCh. 12 - Prob. 9QCh. 12 - Prob. 11Q
Ch. 12 - Discuss the differences between crystalline...Ch. 12 - Prob. 13QCh. 12 - Prob. 15QCh. 12 - Prob. 16QCh. 12 - Prob. 17QCh. 12 - Prob. 19QCh. 12 - Prob. 21QCh. 12 - Prob. 22QCh. 12 - Prob. 1PCh. 12 - Prob. 2PCh. 12 - Prob. 3PCh. 12 - Prob. 4PCh. 12 - Prob. 5PCh. 12 - Prob. 6PCh. 12 - Prob. 7PCh. 12 - The Madelung constant for the NaCl structure may...Ch. 12 - Prob. 9PCh. 12 - Prob. 10PCh. 12 - Prob. 11PCh. 12 - Prob. 12PCh. 12 - Prob. 13PCh. 12 - Prob. 15PCh. 12 - Prob. 16PCh. 12 - Prob. 18PCh. 12 - Prob. 19PCh. 12 - Prob. 20PCh. 12 - Prob. 21PCh. 12 - Determine the current generated in a...Ch. 12 - Prob. 23PCh. 12 - Under pressure, liquid helium can solidify as each...Ch. 12 - Prob. 25P
Knowledge Booster
Similar questions
- 5. a) Consider a GaAs pn junction, in thermal equilibrium at 300 K, under zero-bias and with dopant concentrations of Na = 1 x 1017 cm³ on the p-side of the junction and Nd = 5 x 1015 cm3 on the n-side. ɛr = 13.1 for GaAs. The cross-sectional area of the junction is 1 x 102 cm?. Determine the following junction characteristics; state your answers in this form and show all work on a separate page. Vbi = V Xp = m Energy barrier AE = eV W = Xn = |{max| = N/C m Qn = Qp = C b) Consider the GaAs pn junction as described above under a reverse-bias of 2 V. Determine the following junction characteristics; state your answers in this form and show work on a separate page. Energy barrier AE = eV W =arrow_forwardOn a V-x graph for an O2 molecule, what can we approximate the turning point region to?arrow_forwardCalculate the threshold frequency of Zinc with 6.9x10^-19 J Work Function.arrow_forward
- In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forwardA transistor with a height of 0.4cm and a diameter of 0.6cm is mounted on a circuit board. The transistor is cooled by air flowing over it with an average heat transfer coefficient of30W/m2K. If the air temperature is 55°C and the transistor case temperature is not to exceed 70°C. determine the amount of power this transistor can dissipate safely. Disregard any heat transfer from the transistor base.arrow_forwardMy physics class has turned to online due to the COVID-19 and I am having trouble with some of the word problems my teacher gave me to work on. She presented me with: I am contemplating a career change. If I had 500g of stolen gold jewelry, how much energy would I have to add to it to melt it (so that it was not longer recognizable)? Pretend that it is pure gold. Would you be able to show me how to accomplish this problem so I can see the steps? Thank you for your time. John Paytonarrow_forward
- The relaxation time of mica (o = 10-13 Q' cm-', & = 6) is %3Darrow_forwardFor a 40 wt.% Sn60 wt.% Pb alloy at 150\deg C, (a) what phase(s) is (are) present? (b) What is (are) the composition(s) of the phase(s)? (c) What is (are) the relative amount of the phase(s) in terms of mass fraction?arrow_forwardIn solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.arrow_forward
- Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardShow stepsarrow_forwardCalculate the threshold frequency of Calcium with 4.3x10^-19 J Work Function.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning