(a)
The drift speed of the electrons in GaAs.
(a)
Answer to Problem 12P
The drift speed of the electrons in GaAs is
Explanation of Solution
Write the equation for the drift speed.
Here,
Conclusion:
Substitute
Therefore, the drift speed of the electrons in GaAs is
(b)
The percent of the drift speed to the electron’s thermal speed at
(b)
Answer to Problem 12P
The percent of the drift speed to the electron’s thermal speed at
Explanation of Solution
Write the equation connecting the kinetic energy and the thermal energy of the electron.
Here,
Rewrite the above equation for
Write the equation for the percentage of the drift speed to the electron’s thermal speed.
Conclusion:
The value of
Substitute
Substitute
Therefore, the percent of the drift speed to the electron’s thermal speed at
(c)
The average time between electron collisions.
(c)
Answer to Problem 12P
The average time between electron collisions is
Explanation of Solution
Rewrite equation (I) for
Write the equation for the electron mobility.
Here,
Equate the above two equations and rewrite it for
Conclusion:
The value of
Substitute
Therefore, the average time between electron collisions is
(d)
The electronic mean path.
(d)
Answer to Problem 12P
The electronic mean path is
Explanation of Solution
Write the equation for the electronic mean path.
Here,
Conclusion:
Substitute
Therefore, the electronic mean path is
Want to see more full solutions like this?
Chapter 12 Solutions
Modern Physics
- An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forward. Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close toarrow_forwardPure silicon wafer at the room temperature has an electrical conductivity of 5.5x1040'm3. The electron and hole mobilities of charge carriers are 0.35 m2 / V's1 and 0.12 m2 / V's' respectively. Compute electron and hole concentrations at room temperature.arrow_forward
- The current–voltage characteristic curve for a semiconductor diode as a function of temperature T is given by I = I0(eeΔV/kBT - 1)Here the first symbol e represents Euler’s number, the base of natural logarithms. The second e is the magnitude of the electron charge, the kB stands for Boltzmann’s constant, and T is the absolute temperature. (a) Set up a spreadsheet to calculate I and R = ΔV/I for ΔV = 0.400 V to 0.600 Vin increments of 0.005 V. Assume I0 = 1.00 nA. (b) Plot R versus ΔV for T = 280 K, 300 K, and 320 K.arrow_forwardIn a normal conductor heat is generated at a rate I 2R. Therefore a current-carrying conductor must dissipate heat effectively or it can melt or overheat the device in which it is used. Consider a long cylindrical copper wire (resistivity 1.72x 10-8 Ω*m) of diameter 0.75 mm. If the wire can dissipate 80 W/m2 along its surface, what is the maximum current this wire can carry?arrow_forwardThe diffusion constant for injected electrons in a molecular crystal is 1x10^-2 cm^2/s at room temp. What is the mobility? What is the drift velocity in n electric field of 1x10^5 Volts/cm?arrow_forward
- In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18 to 5 X 10^17 per cc over a distance of 1.5 mm and the diffusion current density is 360 A/cm^2. Find the mobility of electrons.arrow_forward1 (a) Using Townsend's second ionization criterion, consider I, 4 x 10-7 A. Consider a = 2.28/cm. If y = 0.0075, find the gap spacing dspark in cm for spark breakdown criterion. Calculate the current I in A for (i) d = 0.45 xdspark , (ii) d = 0.6 x dspark and (iii) d = 0.8 x dspark Show that the current I = Io exp (ad) when d is very small value and y is also very small value. 1,ead 1- y(ead – 1) (b) For a point-plane gaseous dielectric system, suppose values of a = 2.24 / cm and y = 0.0064. d Find the values of for d = 1.25 cm and d = 1.95 cm. ddarrow_forwardSince the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.arrow_forward
- Hall coefficient of a specimen of depend silicon found to be 3.66×10m³/C. The resistivity of the specimen is 8.93×10-32 m. Find the density of the charge carriers (in electrons/m³) and the mobility in (m/V.s). 1.7e22, 0.04 O 1.8e22, 0.04 O 1.7e22, 0.05 O 1.8e22, 0.05 Oarrow_forwardGiven the fermi energy and electron concentration 7.00 eV and 8.0x1026 e /m' respectively of a Copper of resistivity 1.7x10 N.m, calculate the mean free path. 8- (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nmarrow_forwardi need the answer quicklyarrow_forward
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning