What type of material it would be if it contains Al, Ga, and As. The mole fraction of each element is 0.25, 0.26, and 0.49, respectively. O A. a metallic conductor because Al is present O B. an insulator O C.a p-type semiconductor

What type of material it would be if it contains Al, Ga, and As. The mole fraction of each element is 0.25, 0.26, and 0.49, respectively. O A. a metallic conductor because Al is present O B. an insulator O C.a p-type semiconductor

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 97AP: Determine the Fermi energies for (a) Mg, (b) Na, and (c) Zn.

See similar textbooks

Similar questions

Sheet 1 Q1/ In an atom the number of electrons in 3rd shell is equal to the number of electrons in the 2nd shell. Answer the following question: a- Which is the outermost shell. b- How many electrons are there in its outermost shell. c- What is the total number of protons in the nucleus of this element. Q2/ What is the relation between the energy gap in the semiconductors and temperature? Calculate the energy gap for the silicon and the germanium at 50 C° and 400K. Q3/ compute the require temperature in C° for put a sample of germanium in order to has energy gap equal to 4.6875 x 1018J. Q4/ Two-point charges are brought closer together, increasing the force between them by a factor of 25. By what factor was their separation decreased. Q5/ Calculate the distance that separate two point charges (q1 & q2) experiences equal force, the electric field intensity on each point charge is N equal to 4 x 1020 " (Note: each point charge 1.6 x 10-19 C). C
O A field effect transistor (FET) A. Uses a forward bias p-n junction, B. Uses a high concentration emitter junction, C. Has a very high input resistance, D. Depends on flow of minority carrier.
4. For a silicon diode, the value of the forward-bias voltage typically a. must be greater than 0.3 V b. must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority carriers 5. Ideally, a diode can be represented by a a. voltage source b. resistance c. switch d. all of these 6. When a 60 Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the output frequency is а. 120 Hz b. 30 Hz c. 60 Hz d. O Hz 7. For a certain 12 V zener diode, a 10 mA change in zener current produces a 0.1 V change in zener voltage. The zener impedance for this current range is a. 10 b. 100 2 c. 100
The number density of conduction electrons in a metal can be found from the density ρ of the metal, the mass per mole M of the metal, the number of conduction electrons per metal atom, and Avogadro’s number NA. If we assume one conduction electron per atom, which of the following gives the number density of conduction electrons for a given metal? a. NA ρM b.NA ρ/M c. NA M/ρ d. NA /ρM
The emitter-base junction in a transistor has... A. Forward bias at all times B. Reverse bias at all times C. Low resistance D. None of the above D В A C
Optoelectronics
Calculate the hole velocity when a voltage of 5 V is applied through a semiconductor bar as below: V + 0.05 cm 0.55 cm (Mobility of hole is given as 450 cm²/Vs) Select one: A. 14500 cm/s B. 4090 cm/s C. 4500 cm/s D. 13180 cm/s 0.3 cm
1. With rise in temperature the electrical conductivity of intrinsic semiconductor: a. Increase b. decrease c. Increase and then decrease d. decrease and then Increase 2. In a semiconductor a. There are no free electrons at any temperature b. There are no free electrons at 0K c. Number of free electrons more than that d. None of the above 3.Which of the following characteristics of electrons determines the current in a conductor? (a) Drift velocity alone. (b) Thermal velocity alone. (c) Both drift velocity and thermal velocity. (d) Neither drift nor thermal velocity. 4.If the electric current in a coil is doubled the magnetic flux density a) halves b) remains unchanged c) doubles d) quadruples
Materials in which electrons cannot move from one atom to another are O a. semiconductors O b. insulators O c. good conductors O d. non-ohmic materials
Which of the following statements about drift and diffusion is FALSE? a. The diffusion current of electrons is opposite to the concentration gradient, dndx. b. In silicon with equal concentrations of electrons and holes in an electric field, the drift current of electrons is higher than the drift current of holes. c. An electric field is visible in a band diagram as a slope, where holes will move to higher energy states (drift up the slope) and electrons will move to lower energy states (drift down the slope). d. The diffusion coefficient of holes can be increased by lowering the temperature of the semiconductor.
A silicon diode is operated in an environment whose temperature is ten times its ambient temperature. Its forward breakover voltage will a. not change at all b. be slightly greater than 0.7 V c. be less than 0.7 V d. be greater by ten times
2. Consider that a p-type Si and an n-type Si are in contact as shown in figure below at t=0. Explain a. how a depletion region is formed as time progresses. Include schematics. b. what happens when the p-n junction is forward biased. c. what happens when the p-n junction is reverse biased. P N