Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m? applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it the hall coefficient is 3.7 x10 6 m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/2m
Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m? applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it the hall coefficient is 3.7 x10 6 m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/2m
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ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
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Chapter1: Units, Trigonometry. And Vectors
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Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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![Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and
Imm thick has magnetic density of 0.5 wb/m² applied perpendicular on
the semiconductor , when current of 20 m A flows length wise through it
the hall coefficient is 3.7 ×10 “ m/c
1-find concentration of electrons
2-Hall voltage
3- Mobility of electrons if the conductivity is 112/Qm
Q4: the intrinsic carrier density at room temperature in Ge is 2.37×10" m
3 if the electron and hole mobility are 0.38 and 0.18 m²/v.sec respectively](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fa692cd97-c899-41a9-9a43-772cb632a47b%2F9ad09d4c-e113-4f27-a979-18720a17c74b%2Ffppib0m_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and
Imm thick has magnetic density of 0.5 wb/m² applied perpendicular on
the semiconductor , when current of 20 m A flows length wise through it
the hall coefficient is 3.7 ×10 “ m/c
1-find concentration of electrons
2-Hall voltage
3- Mobility of electrons if the conductivity is 112/Qm
Q4: the intrinsic carrier density at room temperature in Ge is 2.37×10" m
3 if the electron and hole mobility are 0.38 and 0.18 m²/v.sec respectively
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