Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m? applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it the hall coefficient is 3.7 x10 6 m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/2m

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Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and
Imm thick has magnetic density of 0.5 wb/m² applied perpendicular on
the semiconductor , when current of 20 m A flows length wise through it
the hall coefficient is 3.7 ×10 “ m/c
1-find concentration of electrons
2-Hall voltage
3- Mobility of electrons if the conductivity is 112/Qm
Q4: the intrinsic carrier density at room temperature in Ge is 2.37×10" m
3 if the electron and hole mobility are 0.38 and 0.18 m²/v.sec respectively
Transcribed Image Text:Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m² applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it the hall coefficient is 3.7 ×10 “ m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/Qm Q4: the intrinsic carrier density at room temperature in Ge is 2.37×10" m 3 if the electron and hole mobility are 0.38 and 0.18 m²/v.sec respectively
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