Tutorial - Design of Common-Gate (CG) Amplifier Design a common-gate NMOS amplifier with the following parameters: Supply Voltage (VDD): 10 V ⚫Threshold Voltage (Vth): 2 V •Overdrive Voltage (Vov) = VGS-Vth: 1 V • Desired Voltage Gain Av: 10 V/V • Transconductance gm: to be determined •Ensure that the NMOS operates in the saturation region. ⚫ Design Vos to ensure saturation and enough voltage swing. C₁ Vin +VDD RD C₂ V out Rs WI RL Tutorial – Design of Common-Drain (CS) Amplifier - Design a common-drain NMOS amplifier with the following parameters: • Supply Voltage (VDD): 10 V Threshold Voltage (Vth): 2 V •Overdrive Voltage (Vov) = VGS-Vth: 1 V • Desired Voltage Gain Av: Close to 1 V/V •Transconductance gm: 3 mA/V • Load resistance R₁:3.33 k • Ensure that the NMOS operates in the saturation region. ⚫ Design VDs to ensure saturation and enough voltage swing. Rs +Vdd 。 Vo

Tutorial - Design of Common-Gate (CG) Amplifier Design a common-gate NMOS amplifier with the following parameters: Supply Voltage (VDD): 10 V ⚫Threshold Voltage (Vth): 2 V •Overdrive Voltage (Vov) = VGS-Vth: 1 V • Desired Voltage Gain Av: 10 V/V • Transconductance gm: to be determined •Ensure that the NMOS operates in the saturation region. ⚫ Design Vos to ensure saturation and enough voltage swing. C₁ Vin +VDD RD C₂ V out Rs WI RL Tutorial – Design of Common-Drain (CS) Amplifier - Design a common-drain NMOS amplifier with the following parameters: • Supply Voltage (VDD): 10 V Threshold Voltage (Vth): 2 V •Overdrive Voltage (Vov) = VGS-Vth: 1 V • Desired Voltage Gain Av: Close to 1 V/V •Transconductance gm: 3 mA/V • Load resistance R₁:3.33 k • Ensure that the NMOS operates in the saturation region. ⚫ Design VDs to ensure saturation and enough voltage swing. Rs +Vdd 。 Vo

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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rses / Introduction to Electronie Analysis and Design-CE255/EE255 The main disadvantage of the Common Gate MOSFET Amplifier is Select one: a. Has very low output impedance. b. Has very high output impedance. c. Has very high input and output impedance. d. Has very high input impedance. e. Has very low input impedance. essment CE255/EE255 (O1)-Dr. Mamoun Al-Mistar Jump to...
A. For the configuration shown below in 4(A), find the small signal voltage gain (Voutp-Voutm)/Vin B. For the configuration shown in 4(B), find the following parameters (a) DC value of output voltage, (b) input common mode range and (c) small signal voltage gain when all transistors are in saturation vou/Vin as indicated in the diagram; Assume no body bias on M1 ad M2 For this problem ONLY, assume the following device parameters V7, = \V| = 0.5V;K, = k ,' = 100 µA / V²,a, = a, = 0.01 VDD = 3V (10/1) M, M. (10/1) (10/1) M, |M, (10/1) Voutp 20kΩ м, (200/1) м, м, (10/1) м, Vin (1/1) м, M. (10/1) + Vin DC VAN M, 100HA (1/1) M, M, (10/1) (A) (B) V. =-1V
Exercise 1:-
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circuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2
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Open with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+