To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?
To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
Problem 7P
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To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV.
What is the concentration/s of the majority and minority charge carrier?
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