Shows a bias arrangement for both npn and pnp BJTs for operation as an amplifier.
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- Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is 102cm and the doping concentration in the pregion is 1ore and assume that a forward bias of 0.30 V is applied to the pn junction. Nate/ n = 5 ×10 Calculate the minority carrier concentration at the edge of the space charge regions.Below is the LCAO for the sp3 hybrid orbital. What is the value for the c²? (The answer mus be a number, not a fraction) Ya = C($25 +02p₂ +$2p, + $2p:) 2PxP9E.11 (a) For a linear conjugated polyene with each of N carbon atoms contributing an electron in a 2p orbital, the energies E, of the resulting A molecular orbitals are given by: E, =a+2B cos- N+1 k=1, 2,.,N Use this expression to make a reasonable empirical estimate of the resonance integral B for the homologous series consisting of ethene, butadiene, hexatriene, and octatetraene given that t-n ultraviolet absorptions from the HOMO to the LUMO occur at 61 500, 46 080, 39 750, and 32 900 cm", respectively. (b) Calculate the T-electron delocalization energy, Egdo:= E, - n(a+ B), of octatetraene, where E, is the total T-electron binding energy and n is the total number of T-electrons. (c) In the context of this Hückel model, the molecular orbitals are written as linear combinations of the carbon 2p orbitals. The coefficient of the jth atomic orbital in the kth molecular orbital is given by: cN sin j=1,2.N jkn j=1, 2,.,N Evaluate the coefficients of each of the six 2p orbitals in each…
- Consider a 100 Ǻ GaAs/AlGaAs quantum well where the electron effective mass is 0.067 m0. There are 2 x 1012 electron/cm2 in the well. At low temperatures, calculate the magnetic field at which the Fermi level just enters the third Landau level of the ground state sub-band.Shown below Is a portlon of the rotational-vibrational IR-spectrum of DCI (where D H), with 2. the posltlon of each peak Identifled by wavenumber (cm), 0.6 0.5 04 0.3 2090 2110 Wavenumber (cm) Absorbance 2.060.31 A cleaved-facet, DH GaAs laser has an active layer thickness of 0.1 μm, a length of 300μm, and a threshold current density of 1 kA/cm2. Assume unity injection efficiency, an internal loss of 10cm−1, a confinement factor of 0.1, and only radiative recombination. (a) What is the threshold carrier density in the active region? (b) What is the power out of one cleaved facet per micrometer of width at a current density of 2 kA/cm2?(c) What are the photon and carrier densities at 2 kA/cm2?