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QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type and doped with 1x 10 cm donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 10" cm and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 10" cm at T=400K. What is the minimum value of the band gap energy?

QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type and doped with 1x 10 cm donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 10" cm and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 10" cm at T=400K. What is the minimum value of the band gap energy?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type and doped with 1 x 10" cm donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 10 cm and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 105 cm at T=400K. What is the minimum value of the band gap energy?
Transcribed Image Text:QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type and doped with 1 x 10" cm donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 10 cm and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 105 cm at T=400K. What is the minimum value of the band gap energy?
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