Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m³, respectively. (Ans: (a) 7.68x101/m', (b) 2.38x1018/m³)
Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m³, respectively. (Ans: (a) 7.68x101/m', (b) 2.38x1018/m³)
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![Q3: Find the intrinsic carrier concentration in silicon at (a)
T=200K, (b) T=400K. The values of N. and N, are 2.8x1025/m³
and 1.04x1025/m³, respectively.
(Ans: (a) 7.68x101/m, (b) 2.38x1018/m³)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ffc3cf961-0c93-407a-aa5b-c7ea64501758%2Fd24659d7-ba35-4b0c-9d4d-1ee87d3f196d%2Fv65d024_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q3: Find the intrinsic carrier concentration in silicon at (a)
T=200K, (b) T=400K. The values of N. and N, are 2.8x1025/m³
and 1.04x1025/m³, respectively.
(Ans: (a) 7.68x101/m, (b) 2.38x1018/m³)
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