Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg 1.12 eV. The values of N, and N, are 2.8x1025/m and 1.04x1025/m2, respectively. (Ans: n=5.73x10²/m, p-8.43x10/m³)
Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg 1.12 eV. The values of N, and N, are 2.8x1025/m and 1.04x1025/m2, respectively. (Ans: n=5.73x10²/m, p-8.43x10/m³)
Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
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Transcribed Image Text:Q2: Calculate the thermal equilibrium electron and hole
concentration in silicon at T-300K for the case when the Fermi
energy level is 0.22 eV below the conduction band energy. Eg=
1.12 eV. The values of N, and N, are 2.8x1025/m and
1.04x1025/m, respectively.
(Ans: n=5.73x102/m³, p=8.43×10%m?)
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