A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N, = 1019/cm3. If the excess electron concen- tration in the steady state is An = 1015/cm3 and = 10 usec. (minority carries life time) the 计 tp %3D generation rate due to irradiation
A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N, = 1019/cm3. If the excess electron concen- tration in the steady state is An = 1015/cm3 and = 10 usec. (minority carries life time) the 计 tp %3D generation rate due to irradiation
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![A semiconductor is irradiated with light such that
carriers are uniformly generated throughout its
volume. The semiconductor is n-type with
No = 1019/cm3. If the excess electron concen-
tration in the steady state is An = 1015/cm3 and
if Tp=
= 10 usec. (minority carries life time) the
generation rate due to irradiation](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fe5f5a80d-788d-4477-b1ec-027a7e086fa5%2Fa85cfdb7-9817-4ac6-b963-419d413e5f61%2F2thyevb_processed.jpeg&w=3840&q=75)
Transcribed Image Text:A semiconductor is irradiated with light such that
carriers are uniformly generated throughout its
volume. The semiconductor is n-type with
No = 1019/cm3. If the excess electron concen-
tration in the steady state is An = 1015/cm3 and
if Tp=
= 10 usec. (minority carries life time) the
generation rate due to irradiation
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