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please solve with explanation exo 3

please solve with explanation exo 3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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exo 3

 

Exercise 3 An NPN transistor is used in the amplifier circuit of figure 3. The characteristic IB = f(VBE) is assimilated to the line VBE = cst = 0.7V. The characteristic Ic = 9(1B, VCE) are assimilated to parallel lines such as I = 100/B. 1. Plot the network of characteristics for: Ig = {0; 0.5; 10; 15; 20} μA. 2. Plot the load line for Ec = 20 V and R₁ = 10kn and on the same graphic plot the corresponding transfer characteristic. 3. Find the operating point Po characterized by IBO, Ico and VCEO when EB = 2V and RB = 100kn. 4. When Eg varies from 10.1 V around 2 V find grapnically and the analytically amplitude of variations AIB, AIC, AVCE of IB, Ic and VCE. Deduce the voltage gain: AVCE What does the fact that the gain is negative ? Av ДЕв 5. Keeping the same load line, how should you choose the operating point P'o so that the maximum positive and negative variations around this point are EB Figure 3 RB VBE VCE RL identical? What should be the value of the resistance RB, EB remaining equal to 2 V? Deduce the new value of the gain Av. 6. Calculate the power PALO supplied by the source Ec, the power PLO dissipated in the load and the power Pro, dissipated in the transistor when the operating point is P'o. Calculate the same power when the voltage EB is of the form: EB = EBO + EBM Cos wt. Ego being equal to 2 V and EBM corresponding to the maximum possible variation determined in question 5. What can we deduce from this?
Transcribed Image Text:Exercise 3 An NPN transistor is used in the amplifier circuit of figure 3. The characteristic IB = f(VBE) is assimilated to the line VBE = cst = 0.7V. The characteristic Ic = 9(1B, VCE) are assimilated to parallel lines such as I = 100/B. 1. Plot the network of characteristics for: Ig = {0; 0.5; 10; 15; 20} μA. 2. Plot the load line for Ec = 20 V and R₁ = 10kn and on the same graphic plot the corresponding transfer characteristic. 3. Find the operating point Po characterized by IBO, Ico and VCEO when EB = 2V and RB = 100kn. 4. When Eg varies from 10.1 V around 2 V find grapnically and the analytically amplitude of variations AIB, AIC, AVCE of IB, Ic and VCE. Deduce the voltage gain: AVCE What does the fact that the gain is negative ? Av ДЕв 5. Keeping the same load line, how should you choose the operating point P'o so that the maximum positive and negative variations around this point are EB Figure 3 RB VBE VCE RL identical? What should be the value of the resistance RB, EB remaining equal to 2 V? Deduce the new value of the gain Av. 6. Calculate the power PALO supplied by the source Ec, the power PLO dissipated in the load and the power Pro, dissipated in the transistor when the operating point is P'o. Calculate the same power when the voltage EB is of the form: EB = EBO + EBM Cos wt. Ego being equal to 2 V and EBM corresponding to the maximum possible variation determined in question 5. What can we deduce from this?
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