Memory Interfacing: Q2. (a) For a 64 Kbit symmetric memory IC, determine the number of transistors needed to implement a tree type column decoder circuit. If a bit-line type column decoder is now used instead, how many transistors will be correspondingly required? (b) (i) In a 4 Mbit symmetric dynamic RAM (DRAM) IC, each memory cell has a gate capacitance of 0.95 fF and parasitic capacitance of 0.05 fF. If the polysilicon resistance of each cell is 100 2, calculate the delay from the row line operation. Neglect any delay associated with the row decoder circuit. Specify units at every stage of your computation. (ii) It is desirable that the row line delay be not more than 45 nsec. What could be the largest capacity, in number of bits stored, of the memory IC can be? Assume no row line partition has been carried out. Specify units at every stage of your computation.

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Memory Interfacing:
Q2.
(a) For a 64 Kbit symmetric memory IC, determine the number of transistors needed to
implement a tree type column decoder circuit.
If a bit-line type column decoder is now used instead, how many transistors will be
correspondingly required?
(b) (i) In a 4 Mbit symmetric dynamic RAM (DRAM) IC, each memory cell has a gate
capacitance of 0.95 fF and parasitic capacitance of 0.05 fF. If the polysilicon
resistance of each cell is 100 2, calculate the delay from the row line operation.
Neglect any delay associated with the row decoder circuit. Specify units at every
stage of your computation.
(ii) It is desirable that the row line delay be not more than 45 nsec. What could be
the largest capacity, in number of bits stored, of the memory IC can be? Assume
no row line partition has been carried out. Specify units at every stage of your
computation.
Transcribed Image Text:Memory Interfacing: Q2. (a) For a 64 Kbit symmetric memory IC, determine the number of transistors needed to implement a tree type column decoder circuit. If a bit-line type column decoder is now used instead, how many transistors will be correspondingly required? (b) (i) In a 4 Mbit symmetric dynamic RAM (DRAM) IC, each memory cell has a gate capacitance of 0.95 fF and parasitic capacitance of 0.05 fF. If the polysilicon resistance of each cell is 100 2, calculate the delay from the row line operation. Neglect any delay associated with the row decoder circuit. Specify units at every stage of your computation. (ii) It is desirable that the row line delay be not more than 45 nsec. What could be the largest capacity, in number of bits stored, of the memory IC can be? Assume no row line partition has been carried out. Specify units at every stage of your computation.
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