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luminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 x 10^19 atoms/m^3. The drive-in diffusion treatment is to be carried out at 1025 degree C for a period of 4.5 h, which gives a junction depth xj of 3.5 micrometer. Compute the predeposition diffusion time at 950 degree C if the surface concentration is maintained at a constant level of 2 x 10^25 atoms/m^3. For the diffusion of Al in Si, values of Qd and D0  are 3.41 eV/atom and 1.38 x 10^4 m^2/s, respectively.

luminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 x 10^19 atoms/m^3. The drive-in diffusion treatment is to be carried out at 1025 degree C for a period of 4.5 h, which gives a junction depth xj of 3.5 micrometer. Compute the predeposition diffusion time at 950 degree C if the surface concentration is maintained at a constant level of 2 x 10^25 atoms/m^3. For the diffusion of Al in Si, values of Qd and D0  are 3.41 eV/atom and 1.38 x 10^4 m^2/s, respectively.

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Aluminum
atoms are to be diffused into a silicon wafer using both predeposition and drive-in
heat treatments; the background concentration of Al in this silicon material is
known to be 3.5 x 10^19 atoms/m^3.
The drive-in diffusion treatment is to be carried out at 1025 degree C for a
period of 4.5 h, which gives a junction depth xj of 3.5 micrometer.
Compute the predeposition diffusion time at 950 degree C if the surface concentration
is maintained at a constant level of 2 x
10^25
atoms/m^3. For the diffusion of Al in Si, values of Qd and D0  are 3.41 eV/atom and 1.38 x 10^4 m^2/s,
respectively.

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