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e 4.10 eV and 2.29 × 10-³

e 4.10 eV and 2.29 × 10-³

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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**Diffusion of Arsenic in Silicon Wafers: Educational Example** In this integrated circuit design scenario, we examine the diffusion of arsenic (As) into silicon (Si) wafers. - **Background Concentration**: The initial concentration of arsenic within the silicon is \(2.5 \times 10^{20}\) atoms/m\(^3\). - **Predeposition Heat Treatment**: Conducted at 1000°C for 45 minutes, resulting in a constant surface concentration of \(8 \times 10^{26}\) As atoms/m\(^3\). - **Drive-In Temperature**: The process is carried out at 1100°C. The task is to determine the time required for arsenic to diffuse to a junction depth of 1.2 micrometers (\(\mu m\)). - **System Constants**: - Activation energy for diffusion, \(Q_d = 4.10\) eV. - Pre-exponential factor, \(D_0 = 2.29 \times 10^{-3}\) m\(^2\)/s. **Calculation Inquiry**: The diffusion time in hours needed for the specified junction depth at the given conditions. Please enter the calculated diffusion time in the provided text box for further analysis.
Transcribed Image Text:**Diffusion of Arsenic in Silicon Wafers: Educational Example** In this integrated circuit design scenario, we examine the diffusion of arsenic (As) into silicon (Si) wafers. - **Background Concentration**: The initial concentration of arsenic within the silicon is \(2.5 \times 10^{20}\) atoms/m\(^3\). - **Predeposition Heat Treatment**: Conducted at 1000°C for 45 minutes, resulting in a constant surface concentration of \(8 \times 10^{26}\) As atoms/m\(^3\). - **Drive-In Temperature**: The process is carried out at 1100°C. The task is to determine the time required for arsenic to diffuse to a junction depth of 1.2 micrometers (\(\mu m\)). - **System Constants**: - Activation energy for diffusion, \(Q_d = 4.10\) eV. - Pre-exponential factor, \(D_0 = 2.29 \times 10^{-3}\) m\(^2\)/s. **Calculation Inquiry**: The diffusion time in hours needed for the specified junction depth at the given conditions. Please enter the calculated diffusion time in the provided text box for further analysis.
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