e 4.10 eV and 2.29 × 10-³
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Transcribed Image Text:**Diffusion of Arsenic in Silicon Wafers: Educational Example**
In this integrated circuit design scenario, we examine the diffusion of arsenic (As) into silicon (Si) wafers.
- **Background Concentration**: The initial concentration of arsenic within the silicon is \(2.5 \times 10^{20}\) atoms/m\(^3\).
- **Predeposition Heat Treatment**: Conducted at 1000°C for 45 minutes, resulting in a constant surface concentration of \(8 \times 10^{26}\) As atoms/m\(^3\).
- **Drive-In Temperature**: The process is carried out at 1100°C. The task is to determine the time required for arsenic to diffuse to a junction depth of 1.2 micrometers (\(\mu m\)).
- **System Constants**:
- Activation energy for diffusion, \(Q_d = 4.10\) eV.
- Pre-exponential factor, \(D_0 = 2.29 \times 10^{-3}\) m\(^2\)/s.
**Calculation Inquiry**: The diffusion time in hours needed for the specified junction depth at the given conditions.
Please enter the calculated diffusion time in the provided text box for further analysis.
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