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4. A technique that can be used to characterize the growth mode during homoepitaxial thin film growth is, (a) x-ray photoelectron spectroscopy. (b) x-ray diffraction. (c) helium-ion scattering. (d) all the above.

4. A technique that can be used to characterize the growth mode during homoepitaxial thin film growth is, (a) x-ray photoelectron spectroscopy. (b) x-ray diffraction. (c) helium-ion scattering. (d) all the above.

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
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4. A technique that can be used to characterize the growth mode during homoepitaxial thin film growth is, (a) x-ray photoelectron spectroscopy. (b) x-ray diffraction. (c) helium-ion scattering. (d) all the above.
Transcribed Image Text:4. A technique that can be used to characterize the growth mode during homoepitaxial thin film growth is, (a) x-ray photoelectron spectroscopy. (b) x-ray diffraction. (c) helium-ion scattering. (d) all the above.
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