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Compute the predeposition diffusion time

Compute the predeposition diffusion time

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 2.0 x 101⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 x 10-4 m²/s, respectively. i min
Transcribed Image Text:Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 2.0 x 101⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 x 10-4 m²/s, respectively. i min
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