Answer fast Figure P2.47 gives the electron and hole concentrations in a 2-um-wide region of silicon. In addition, there is a constantelectric field of 25 V/cm present in the sample. What is the total current density at x=0? What are the individual drift anddiffusion components of the hole and electron current densities at x = 1.0 μm? Assume that the electron and hole mobilities are350 and 150 cm²/V. s, respectively.E1.01 x 1018p(x)10181016n(x)104x=0x = 2 μmFigure P2.47

Given: - Width of the silicon region: It calculate that(L=2mum). - Electric field: The following…

Answered: Figure P2.47 gives the electron and…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
semiconductors
Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junction
Please Help ASAP!!!! Just do A-C
Please find the correct answer by solving the problem
USING D1 1N4001G or SILICON DIODE. To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. Battery Diode Diode Voltage Current Voltage Battery Diode voltage Voltage 0.1V 0.3V 0.5V 0.7V 1.0V 2.0V 3.0V 10.0V Diode Current Forward Bias Condition A V 0.1V 0.5V 2.0V 5.0V 10v 20V 25V 30V Reverse Bias Condition Note: used any electronics software to perform this activity
Silicon is doped with an acceptor concentration of 2.5 × 1018/cm3. Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?
A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
(a) Figure 1 shows a circuit that consists of two silicon diodes, D₁ and D2. Using ideal model approximation technique, determine the current cross through the diodes, D₁ and D₂ and the output voltage, Vo. Next, perform the same analysis using the Piecewise-Linear equivalent circuit for the diode with a forward resistance value, rav of 50. Finally, compare and discuss the results between ideal and Piecewise-Linear equivalent circuits. R₁ 1 D₁ +3V 5 ΚΩ 19 10 ΚΩ -3V Figure 1
Number 4 only using complete diode model
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ

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