VDDiDLUGSL+VDSLiDDLoad:VTNL-KLDriver:UDSDVIND-KDGSD(a)iDAVDS (sat)=UGS--VTNTransition pointVDD-VTNL VDD "DS(b)Figure 16.5 (a) NMOS inverter with saturated load and (b) driver transistor characteristicsand load curve EXERCISE PROBLEMEx 16.2: The enhancement-load NMOS inverter in Figure 16.5(a) is biasedat VDD =3V. The transistor parameters are K = 100 μA/V², VIND =VTNL 0.4 V, (W/L)D=16, and (W/L), 2. (a) Determine vo when(i) v, = 0.1 V and (ii) v = 2.6 V. Neglect the body effect. (b) Determine the max-imum current and maximum power dissipation in the inverter. (c) Determine thetransition point for the driver transistor. (Ans. (a) (i) vo = 2.6 V, (ii) vo = 0.174 V;(b) iD.max = 0.589 mA, PD,max = 1.766 mW; (c) VII = 1.08 V, Vor = 0.68 V)

Answered: VDD iDL UGSL + VDSL iDD Load: VTNL-KL…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Design an asymmetrical inverter to meet the delay specificationa symmetrical CMOS reference inverter to provide a delay of 1 ns when driving a 10-pF load.(a) Assume VDD =2.5 V. (b) Assume VDD =1.8 V and VT N =−VT P =0.45 V. with (W/L)P = 2(W/L)N .
4
None
Q5 Consider a four-input CMOS NAND logic gate. Draw the circuit, then: Q6 a) Determine the W/L ratios of the transistors to provide for symmetrical switching based blcon the CMOS inverter design with (W/L) 2 and (W/L), 4. b) If the load capacitance of the NOR gate becomes 5 times the original value, determine the required W/L ratios to provide the same switching speed as the logic gate in part (a). Design a CMOS circuit to implement the logic function. The design should not include a CMOS inverter at the output. F= ABC + ACD + ACD
In the single-phase, full-bridge inverter controlled by the single PWM control, the frequency of the reference signal determines:
BORS. Fenice, forced commutation in SUCIT CAS 6. A single phase full bridge inverter circuit, has load R = 2Q and dc source Vs = 230 V. Find the value of power delivered to the load in watts only due to the fundamental component of the current. load
A single-phase half-bridge inverter has R-2.502 and the DC input voltage is 50V. Determine: • The rms output voltage at the fundamental frequency, • The output power, • The average and peak current of each transistor, 0 The peak reverse blocking voltage of each transistor, The average supply current.
for square wave PWM inverter, Vdc=100V, L=25mH, R=1002, f=60Hz. draw the spectrum of the output voltage and current and then find the rms current value and the output power. Take n =1-20.
Q1) The square-wave inverter has a de input of 150 V and supplies a series RL load with R=20 Q and L = 40 mH. (a) Determine an expression for steady state load current. (b) Sketch the load current and indicate the time intervals when each switch component (Q1, D1;... Q4, D4) is conducting. (c) Determine the peak current in each switch component. (d) What is the maximum voltage across each switch?
Problem 2 A square-wave inverter has an RL load with R = 15 Ohms and L= 10 mH. The inverter output frequency is 400 Hz. (a) Determine the value of the de source, Vac required to establish a load current, /, that has a fundamental frequency component of 8 A rms. (b) Determine the total harmonic distortion of the load current, THD,. Note: Populate the following table to help you find THD,. |VB| Z₁ n 1 3 5 In rms
For a stable operation a series resonant inverter circuit should be: Select one: Oa. Overdamped O b. Underdamped Oc. None of these Od. Critically damped Parallel resonant inverters are mostly known for the following features: Select one: a. The output current is dependent from the load. O b. The resonant circuit, load and switch are all in parallels Oc. It has the advantage of requiring small reactive components Od. None of these
(a) For the CMOS inverter in Figure 16.21 in the text, let VDD = 3.3 V, VTN=+0.4 V, and VTP = -0.4 V. Assume (W/L), = 4 and (W/L)p = 12. Determine (i) the input switching voltage, (ii) the input voltage when vo = 3.1 V, and (iii) the input voltage when vo= 0.2 V. (b) Repeat part (a) for (W/L)n = 6 and (W/L)p = 4. Use: μn*Cox = 100 µA/V²; µp*Cox = 40 μA/V² for your Kn and Kp. VDD VI VSGP + iDP + PMOS: VSDP Kp,VTP + VGSN + OVO iDN VDSN NMOS: KN, VTN

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