EXERCISE PROBLEMEx 1.4: Consider silicon at T = 300 K. Assume the hole concentration is givenby p=1016ex/Lp (cm³), where Lp = 103 cm. Calculate the hole diffusioncurrent density at (a) x = 0 and (b) x = 10-3 cm. Assume D₁ = 10 cm²/s. (Ans.(a) 16 A/cm², (b) 5.89 A/cm²)

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Answered: EXERCISE PROBLEM Ex 1.4: Consider…

Introductory Circuit Analysis (13th Edition)

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Determine the thermal equilibrium electron and hole concentrations in a compensated n- type semiconductor. Consider a silicon semiconductor at T = 300°K in which Na = 10° cm³ and Na = 3 x 105 cm. Assume that n; =1.5 x 10º cm?.

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EXERCISE PROBLEM Ex 1.4: Consider silicon at T = 300 K. Assume the hole concentration is given by p=1016ex/Lp (cm³), where Lp = 103 cm. Calculate the hole diffusion current density at (a) x = 0 and (b) x = 10-3 cm. Assume D₁ = 10 cm²/s. (Ans. (a) 16 A/cm², (b) 5.89 A/cm²)