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O Assume D = Doe EKT is the diffusion coefficient of boron in silicon surface, where Do= 10.5 cm²/s and E₁ = 3.7 eV. The substrate is N-type silicon doped to 10¹15 cm³. No = 10¹5 cm² of boron is introduced just below the silicon surface. (a) What is the junction depth after a 1-h drive-in at 1,100°C? (b) By how much will the junction depth change after 106 h (~100 years) of operation at 100°C?

O Assume D = Doe EKT is the diffusion coefficient of boron in silicon surface, where Do= 10.5 cm²/s and E₁ = 3.7 eV. The substrate is N-type silicon doped to 10¹15 cm³. No = 10¹5 cm² of boron is introduced just below the silicon surface. (a) What is the junction depth after a 1-h drive-in at 1,100°C? (b) By how much will the junction depth change after 106 h (~100 years) of operation at 100°C?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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O Assume D = Doe EKT is the diffusion coefficient of boron in silicon surface, where Do= 10.5 cm²/s and E₁ = 3.7 eV. The substrate is N-type silicon doped to 10¹15 cm³. No = 10¹5 cm² of boron is introduced just below the silicon surface. (a) What is the junction depth after a 1-h drive-in at 1,100°C? (b) By how much will the junction depth change after 106 h (~100 years) of operation at 100°C?
Transcribed Image Text:O Assume D = Doe EKT is the diffusion coefficient of boron in silicon surface, where Do= 10.5 cm²/s and E₁ = 3.7 eV. The substrate is N-type silicon doped to 10¹15 cm³. No = 10¹5 cm² of boron is introduced just below the silicon surface. (a) What is the junction depth after a 1-h drive-in at 1,100°C? (b) By how much will the junction depth change after 106 h (~100 years) of operation at 100°C?
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