O Assume D = Doe EKT is the diffusion coefficient of boron in silicon surface, where Do= 10.5 cm²/s and E₁ = 3.7 eV. The substrate is N-type silicon doped to 10¹15 cm³. No = 10¹5 cm² of boron is introduced just below the silicon surface. (a) What is the junction depth after a 1-h drive-in at 1,100°C? (b) By how much will the junction depth change after 106 h (~100 years) of operation at 100°C?

A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A

Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?

The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.