Design the JFET circuit for the largest in swing. Use the self-bias circuit shown in Fig. 6. Assume that VGS (0) = -1.3 and Vcc = 15 volts. Furthermore, assume that ipss = 20 mA. Using Fig. 4b, draw the load line and identify the Q point. Explain why this will allow the largest swing. Use ip = ipss (1- VGS VGS(0) to show what happens to i, and vps when you have a swing of 0.2 volts in vcs form its operating point (that is, change vas by ±0.2 volts and compute the corresponding iD and VDs). RD RG Rs 0 20nA GS=-1.3 VGS 12 10nA -0- Fig. 6. Circuit for Examples 2 &3. BA-C 50 100 150 200 □ ID(J1) UDS Fig. 4b. The IV characteristics of an n-channel JFET (J113). The plots are for VGs increments of 0.05 volts. VGS(0) -1.3. The yellow and blue load lines are for examples 2 &3, respectively.

Design the JFET circuit for the largest in swing. Use the self-bias circuit shown in Fig. 6. Assume that VGS (0) = -1.3 and Vcc = 15 volts. Furthermore, assume that ipss = 20 mA. Using Fig. 4b, draw the load line and identify the Q point. Explain why this will allow the largest swing. Use ip = ipss (1- VGS VGS(0) to show what happens to i, and vps when you have a swing of 0.2 volts in vcs form its operating point (that is, change vas by ±0.2 volts and compute the corresponding iD and VDs). RD RG Rs 0 20nA GS=-1.3 VGS 12 10nA -0- Fig. 6. Circuit for Examples 2 &3. BA-C 50 100 150 200 □ ID(J1) UDS Fig. 4b. The IV characteristics of an n-channel JFET (J113). The plots are for VGs increments of 0.05 volts. VGS(0) -1.3. The yellow and blue load lines are for examples 2 &3, respectively.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Sketch the transfer and drain characteristics of an n - channel depletion type MOSFET with IDSS = 12 mA and VP = –8 V for a range of VGS = –VP to VGS = 1V. Show the details of your work.
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
Sketch the transfer and drain characteristics of an n-channel depletion-type MOSFET with IDSS = 12 mA and VP = -8 V for a range of VGS = - VP to VGS = 1 V.
#12 and #38
Sketch the transfer and drain characteristics of an n-channel depletion-type MOSFET with IDSS=12 mA and Vp= -8V for a range of VGS= -Vp to VGS= 1V.
Sketch the basic construction of the two types of BJT Transistors and label the various minority and majority carriers in each. Draw the symbol with the three terminals. Is any of this information altered by changing from a silicon to a germanium base?
On a VCE - Ic graph: a) Draw a load line for a BJT transistor, and show the change of Q point with three different IB values. (IBI< IB2 < IB3) (Q1 , Q2 , Q3). Explain the reason for the changes shortly. 4) b) Draw the load line and show the change of Q point with three different Rc (Rci< Rc2< Rc3) values (IB constant). Explain the reason for the changes shortly.
Determine the value of Icopy for the MOSFET current mirror circuit shown below. You may assume that CLM may be neglected for all transistors. VDD IREF (+ MREF = 12 (1) p 5(W) ³ (1) I copy
A pnp transistor has VEB=0.7V at a collector current of 1mA. What do you expect VEB to become at Ic=10mA? At Ic=100mA?
In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of B is a. 100 b. 50 c. about 1 d. 200 In a transistor if B = 100 and collector current is 10 mA, then IE is . a. 100 mA b. 100.1 mA c. 110 mA d. none of the above
Sketch all applicable depletion regions for a p-channel MOSFET when the source remains grounded, an appropriate voltage is applied to the gate to induce a channel, and a drain voltage is applied that causes a reverse bias between the drain and the substrate.
Title If the emitter current of a transistor is 8 mA and B is 1100 of C, determine the levels of C and B.. Description If the emitter current of a transistor is 8 mA and IB is 1100 of Ic, determine the levels of Ic and IB. 3.4 Common-Base Configuration