Design a self-biased JFET circuit (Fig. 6) assuming VGS(0) = -1.3 and ipss=20 mA. We require a VGS = -0.7. Assume a supply voltage of 15 volts. Draw theload line for this circuit using Fig. 4b once you have selected the appropriate valuesfor the components. Does the load line intersect the VGS = -0.7 volt line at thecomputed in point?RD.RGRs1220nAGS = -1.3VGS10nAFig. 6. Circuit for Examples 2 &3.50100150200□ ID(J1)UDSFig. 4b. The IV characteristics of an n-channel JFET (J113). The plots are for VGs increments of0.05 volts. VGS(0) -1.3. The yellow and blue load lines are for examples 2 &3,respectively.

Answered: Image /qna-images/answer/d1fd34ef-a4f9-44ed-be9f-07d88bc714b6.jpg

Answered: Design a self-biased JFET circuit (Fig.…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

For the given BJT circuit, determine the operating point and plot the DC load line showing the Ic(sat) and Vce(max). 16 V 510 k2 Ing Ico 1.8kQ2 VC Vcto B-120
Calculate the drain current for a p-channel JFET described by IDSS = 2.5 mAand VP = 4 V and operating with VGS = 3 V and VDS = −3 V. What is the minimum drainsource voltage required to pinch off the JFET? (b) Repeat for VGS = 1 V and VDS = −6 V.(c) Repeat for VGS = 2 V and VDS = −0.5 V
RB= 430 kilo ohm
a) Design the network of Figure (1) to maintain VL at 12 V for a load variation IL from (0 mA to 200 mA). Determine Rs, RL and Vz. b) Determine Pzmax for the zener diode. Rs 16 Vo Vz RL Figure (1)
Please answer the questions 1 c, and d with details on why it is true or false. Please make handwriting legible. Thank you.
a) Figure B3 shows a cross section for a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in diagrammatic form. (i) (ii) Sketch the energy band diagram for the MOSFET along the line X-Y shown in Figure B3 when bias voltages are applied such that the silicon surface is inverted. Label all important features of your sketch and state any assumptions made. Sketch a box plot showing the charges present in the structure when the silicon surface is inverted. Indicate the source of all the charges and state whether they are positive or negative. Source n+ Metal Silicon Substrate - p X dioxide Drain n*
Problem 1. We have identical crystalline silicon solar cells available, with a short circuit current of 4 A and an open circuitvoltage of 0.6 V at STC. These cells are used to make a PV module with 54 cells connected in series. I. What is the open circuit voltage of the module at STC? Assume that the interconnection losses arenegligible.II. What is the short circuit current of the module at STC? III. Assume that the module does not have any bypass diodes. If the module is partially shaded and one ofthe cells is only able to produce 2 A, what will be the new short circuit current under these conditions?
For the PN junction under sun light, the short circuit current amount is Isc. Please sketch the I-V curve of PN under the sun based on that under the dark condition above. Indicate Isc and Voc in your plot.
choose the correct answer 1-The output voltage of an emitter follower isa-In phase with Vin . b-Much greater than Vin . c-180° out of phase.d-Generally much less than Vin .2-The ac emitter resistance of an emitter followera-Equal the dc emitter resistance .b-Is larger than the load resistance .c-Is β times smaller than the load resistance. d-Is usually less than the load resistance.3-A common-base amplifier can be used when a-Matching low to high impedance.b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed.d-All of the above.
Please answer fully
a) Design the bias circuit for the transistor in figure A (find Rc, RB „RE) for given values: VCE = 4V, Ic =3 mA and the voltage value on the resistor RE is 2 V and hFE is 100. Vcc -10 V It RB RC b) If the hFE of transistor become 200 by the effect of temperature what will be new Ic value with resistor values you found in a. RE Figure A 1 KN 1 KN 22 KN 4.7 KN Vcc Vcc VEE VCB VBE BE VCB VEE Figure 1 Figure 2 c) Were the input and output characteristics of BJTS obtained similar like literature? d) What are the main concepts in the preparation of BJT bias circuit?
Question 2 (a) To achieve correct operation when using a Bipolar Transistor how should the two p-n junctions be biased?

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