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5: Choose the correct answer! 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and source None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed Concentration gradient in holes • Concentration gradient in free All of these) trons

5: Choose the correct answer! 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and source None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed Concentration gradient in holes • Concentration gradient in free All of these) trons

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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05: Choose the correct answer: 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and soarce None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed • Concentration gradient in holes • Concentration gradient in free electrons All of these) 4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS circuit is made by (doping impact ionization tunnelling electric field) 9. What are the applications of semiconductor devices? (Microprocessors Analog circuits High voltage applications All of these)
Transcribed Image Text:05: Choose the correct answer: 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and soarce None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed • Concentration gradient in holes • Concentration gradient in free electrons All of these) 4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS circuit is made by (doping impact ionization tunnelling electric field) 9. What are the applications of semiconductor devices? (Microprocessors Analog circuits High voltage applications All of these)
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