Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm. The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V. (a) Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID = (100+X) μA. Where X=Last digit of your ID+2.5. here x=2
Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm. The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V. (a) Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID = (100+X) μA. Where X=Last digit of your ID+2.5. here x=2
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Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm.
The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V.
(a) Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID =
(100+X) μA. Where X=Last digit of your ID+2.5.
here x=2
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