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parameters 400 A°. A ideal n-channel MOSFET has H, = 525 cm²/V -s , Vy = 0.75 V, t When MOSFET is biased in the saturation region at V= 5 V, the required rated current is = 6 mA. The required ratio W/L is TN OL %3D GS I D( sat) %3D

parameters 400 A°. A ideal n-channel MOSFET has H, = 525 cm²/V -s , Vy = 0.75 V, t When MOSFET is biased in the saturation region at V= 5 V, the required rated current is = 6 mA. The required ratio W/L is TN OL %3D GS I D( sat) %3D

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A ideal n-channel MOSFET has 525 cm²/V -s parameters = 400 A°. 4. = , Vy = 0.75 V, t When MOSFET is biased in the saturation region at V = 5 V, %3D %3D TN the required rated current is GS I = 6 mA. The required ratio W/L is D( sat)
Transcribed Image Text:A ideal n-channel MOSFET has 525 cm²/V -s parameters = 400 A°. 4. = , Vy = 0.75 V, t When MOSFET is biased in the saturation region at V = 5 V, %3D %3D TN the required rated current is GS I = 6 mA. The required ratio W/L is D( sat)
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