Consider a silicon semiconductor at T=300 K and the acceptor doping concentration is Na=0. Plot the minority carrier concentration over the range 10^15

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Consider a silicon semiconductor at T=300 K and the acceptor doping concentration is Na=0. Plot the minority carrier concentration over the

range 10^15<N<10^18 cm^3 for every 10 cm³ rise in concentration of Nd. Consider that dopant atoms completely ionize at 300 K and the intrinsic carrier concentration is given by n; = 1.5 × 10^10 cm-3.

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