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Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 5 x 10¹5 cm-³, and the cross-sectional area A = 104 cm² in equilibrium state. Assume T = 300 K, µn = 1110 cm²/V-s, and up = 400 cm²/V-s. (a) Calculate the majority and minority carrier concentrations in both the p and n regions. (b) Calculate the depletion-layer width (W) and its length on the n side (xn) and p side (xp). (c) Calculate the charge stored on either side of the depletion region. (d) Sketch the carrier concentrations profile, the space-charge profile, and the potential distribution profile. (e) Now let NA 1018 cm 3. How has the depletion width changed?

Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 5 x 10¹5 cm-³, and the cross-sectional area A = 104 cm² in equilibrium state. Assume T = 300 K, µn = 1110 cm²/V-s, and up = 400 cm²/V-s. (a) Calculate the majority and minority carrier concentrations in both the p and n regions. (b) Calculate the depletion-layer width (W) and its length on the n side (xn) and p side (xp). (c) Calculate the charge stored on either side of the depletion region. (d) Sketch the carrier concentrations profile, the space-charge profile, and the potential distribution profile. (e) Now let NA 1018 cm 3. How has the depletion width changed?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 5 x 10¹5 cm-³, and the cross-sectional area A = 104 cm² in equilibrium state. Assume T = 300 K, µn = 1110 cm²/V-s, and up = 400 cm²/V-s. (a) Calculate the majority and minority carrier concentrations in both the p and n regions. (b) Calculate the depletion-layer width (W) and its length on the n side (xn) and p side (xp). (c) Calculate the charge stored on either side of the depletion region. (d) Sketch the carrier concentrations profile, the space-charge profile, and the potential distribution profile. (e) Now let NA 1018 cm 3. How has the depletion width changed?
Transcribed Image Text:Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 5 x 10¹5 cm-³, and the cross-sectional area A = 104 cm² in equilibrium state. Assume T = 300 K, µn = 1110 cm²/V-s, and up = 400 cm²/V-s. (a) Calculate the majority and minority carrier concentrations in both the p and n regions. (b) Calculate the depletion-layer width (W) and its length on the n side (xn) and p side (xp). (c) Calculate the charge stored on either side of the depletion region. (d) Sketch the carrier concentrations profile, the space-charge profile, and the potential distribution profile. (e) Now let NA 1018 cm 3. How has the depletion width changed?
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