Consider a silicon pn junction at 300 K under no applied bias. Calculate the space charge widths extended into p and n type regions(xp & Xn)of semiconductor with doping concentrations -3 and Na = 1015 cm respectively. Given ст = 1016 cm Na ст-3 relative permittivity (E,) of Si is 11.7 and n; =1.5 ×101ºcm-3.
Consider a silicon pn junction at 300 K under no applied bias. Calculate the space charge widths extended into p and n type regions(xp & Xn)of semiconductor with doping concentrations -3 and Na = 1015 cm respectively. Given ст = 1016 cm Na ст-3 relative permittivity (E,) of Si is 11.7 and n; =1.5 ×101ºcm-3.
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Consider a silicon pn junction at 300 K under no applied bias.
Calculate the space charge widths extended into p andn type
regions(x, & Xn)of semiconductor with doping concentrations
Na
relative permittivity (E,) of Si is 11.7 and n; =1.5 ×101ºcm-3,
1016 cm-3 and Na
1015 cm-3 respectively. Given
ст
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