1. Consider a CMOS process with VDD = 1.8 V, VTN = 0.7 V, VTP = 0.87 V, kn = 100 µA/V², kp = 30μA/V². For a pseudo-NMOS inverter sized with (W/L)n = 2 and (W/L)p = 8, find out VOL. Will thisdevice be able to drive another circuit properly? If yes, please justify your answer. If not, please explaina way to solve the issue.2.Design a 3×2-bit multiplier for unsigned numbers. Design it using the Cadence.3. Sketch a 12-input CMOS OR gate using only NOR gates of no more than 3 inputs each. Compute thenumber of NMOS required to design this circuit. Design it using the Cadence. 6. Sketch a 3-input XOR and a 4-to-1 MUX by applying Transmission Gate and Pass-transistor. Computethe number of transistors required to design those gates. Design and simulate it using the Cadence.7. Select and analyze a latch that will mitigate all the drawbacks of a transmission gate latch. Distinguishall the delay elements of a flip-flop.8.A 3-input NAND gate is designed using dynamic logic. Compute the output voltage (Vout) for thiscircuit when the inputs are 1, 0, 1 (i.e., NMOS2 is receiving 0 input). Design it using the Cadence.Simulate for different input patterns.

Consider a CMOS process with VDD = 1.8 V, VTN = 0.7 V, VTP = 0.87 V, kn = 100 μA/V², kp = 30 μA/V². For a pseudo-NMOS inverter sized with (W/L)n = 2 and (W/L)p= 8, find out VOL. Will this device be able to drive another circuit properly? If yes, please justify your answer. If not, please explain a way to solve the issue.

Consider a CMOS process with VDD = 1.8 V, VTN = 0.7 V, VTP = 0.87 V, kn = 100 μA/V², kp = 30 μA/V². For a pseudo-NMOS inverter sized with (W/L)n = 2 and (W/L)p= 8, find out VOL. Will this device be able to drive another circuit properly? If yes, please justify your answer. If not, please explain a way to solve the issue.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Digital Integrated Circuit Design

Digital IC design is a procedural interaction that involves converting determinations and highlights into computerized blocks, which are then further transformed into basic circuits. A significant number of the imperatives related with advanced IC plan come from the foundry cycle and innovative restrictions.

Question

1. Consider a CMOS process with VDD = 1.8 V, VTN = 0.7 V, VTP = 0.87 V, kn = 100 µA/V², kp = 30
μA/V². For a pseudo-NMOS inverter sized with (W/L)n = 2 and (W/L)p = 8, find out VOL. Will this
device be able to drive another circuit properly? If yes, please justify your answer. If not, please explain
a way to solve the issue.
2.
Design a 3×2-bit multiplier for unsigned numbers. Design it using the Cadence.
3. Sketch a 12-input CMOS OR gate using only NOR gates of no more than 3 inputs each. Compute the
number of NMOS required to design this circuit. Design it using the Cadence.

6. Sketch a 3-input XOR and a 4-to-1 MUX by applying Transmission Gate and Pass-transistor. Compute
the number of transistors required to design those gates. Design and simulate it using the Cadence.
7. Select and analyze a latch that will mitigate all the drawbacks of a transmission gate latch. Distinguish
all the delay elements of a flip-flop.
8.
A 3-input NAND gate is designed using dynamic logic. Compute the output voltage (Vout) for this
circuit when the inputs are 1, 0, 1 (i.e., NMOS2 is receiving 0 input). Design it using the Cadence.
Simulate for different input patterns.

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1. Design a CMOS inverter using 0.25um CMOS devices, such that VM-V DD/2. Assume that the NMOS and PMOS device parameters are given below and VDD 2.5V and (W/L)n=1.5. ⚫ In our generic 0.25 micron CMOS process, using the process parameters from table a VDD = 2.5V, and a minimum size NMOS device ((W/L) of 1.5) VTO(V) (V0.5) VDSAT (V) NMOS PMOS 0.43 0.4 0.63 K'(A/V²) 115 x 10-6 λ(V-1) 0.06 -0.4 -0.4 -0.8 -30 x 10-6 -0.1 2. Estimate all static parameters of the inverter in problem 1, including VOL, VOH, VM, VIL, VIH, NML, and NMH.
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