One simple way to analytically define the threshold voltage of the CMOS inverter is to find the input voltage for which the saturation currents of the nEET and PEET are equal (ignoring the Early effect). If Vn. (NEET, threshold) = 1.55V and Vp (pEET, threshold) = -1.50V and k'n (W/ L)n= 290 UA/V^2 and kp'(W/L)p = 250 yA/V^2. Find the logic threshold of an inverter made using these two transistors. Use VDD = SV. (Note: There are several other ways to define the inverter threshold: (1) the input voltage where the output crosses VDD /2, or (2) where V Y. IN OUT =. Ideally, to maximize noise margins, it is desirable to haye V, threshold V OUT = V DD /2) VDp VIN VouT

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One simple way to analytically define the threshold voltage of the CMOS inverter
is to find the input voltage for which the saturation currents of the nFET and PEET are equal
(ignoring the Early effect). If Vin (NEET threshold) = 1.55V and YtR. (REET threshold) = -1.50V
and kin (W/ L)n = 290 UA/V^2 and kp'(W/L)p = 250 yA/V^2.
Find the logic threshold of an inverter made using these two transistors. Use VDD = 5V.
(Note: There are several other ways to define the inverter threshold: (1) the input voltage where
the output crosses VDD /2, or (2) where V V, IN OUT = . Ideally, to maximize noise margins, it
is desirable to have V threshold V OUT = V DD /2)
vDp
VN
VOUT
Transcribed Image Text:One simple way to analytically define the threshold voltage of the CMOS inverter is to find the input voltage for which the saturation currents of the nFET and PEET are equal (ignoring the Early effect). If Vin (NEET threshold) = 1.55V and YtR. (REET threshold) = -1.50V and kin (W/ L)n = 290 UA/V^2 and kp'(W/L)p = 250 yA/V^2. Find the logic threshold of an inverter made using these two transistors. Use VDD = 5V. (Note: There are several other ways to define the inverter threshold: (1) the input voltage where the output crosses VDD /2, or (2) where V V, IN OUT = . Ideally, to maximize noise margins, it is desirable to have V threshold V OUT = V DD /2) vDp VN VOUT
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