Let's design CMOS logic gate $ F (A, B, C, D) = A + (B \cdot C) + D $. For PMOS transistors and NMOS transistors of the same size, consider a fabrication process that is **four times** the resistance of the PMOS transistor. Assume that all diffusion areas have no sharing. A unit inverter refers to a minimum-sized inverter that makes rise resistance (also called pullup resistance) and fall resistance (also called pulldown resistance) equal by sizing the CMOS inverter shown in the following figure with PMOS:NMOS = 4:1.**Diagram Description:**A CMOS inverter circuit is depicted. It consists of:- A PMOS transistor at the top, connected to $ V_{DD} $.- An NMOS transistor at the bottom, connected to GND.- The input voltage $ V_{in} $ is applied at the gate of both transistors.- The output voltage $ V_{out} $ is taken from the connection between the PMOS and NMOS transistors.- Both transistors are shown in a typical inverter configuration.**Tasks:**(a) Draw the transistor-level schematic of CMOS logic gate $ F $ consisting of PMOS and NMOS.(b) In the worst-case scenario, size the PMOS and NMOS transistors of CMOS logic gate $ F $ to have the same rise and fall resistance as a unit inverter.(c) Find the logical effect $ g_A $ and intrinsic delay $ p $ of CMOS logic gate $ F $ with respect to Input $ A $.

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Let's design CMOS logistic gate F (A, B, C, D) = A + (B•C) + D. For PMOS transistors and NMOS transistors of the same size, consider a fabrication process that is four times the resistance of the PMOS transistor. Assume that all diffusion areas have no sharing. Unit inverter refers to a minimum-sized inverter that makes rise resistance (also called pullup resistance) and fall resistance (also called pulldown resistance) equal by sizing the CMOS inverter shown in the following figure with PMOS:NMOS = 4:1. Vin VDD J -Vout GND (a) Draw the transistor-level schematic of CMOS logic gate F consisting of PMOS and NMOS. (b) In the worst case scenario, size the PMOS and NMOS transistors of CMOS logic gate F to have the same rise and fall resistance as unit inverter. (c) Find the logical effect gA and intrinsic delay p of CMOS logic gate F with respect to Input A.

Let's design CMOS logistic gate F (A, B, C, D) = A + (B•C) + D. For PMOS transistors and NMOS transistors of the same size, consider a fabrication process that is four times the resistance of the PMOS transistor. Assume that all diffusion areas have no sharing. Unit inverter refers to a minimum-sized inverter that makes rise resistance (also called pullup resistance) and fall resistance (also called pulldown resistance) equal by sizing the CMOS inverter shown in the following figure with PMOS:NMOS = 4:1. Vin VDD J -Vout GND (a) Draw the transistor-level schematic of CMOS logic gate F consisting of PMOS and NMOS. (b) In the worst case scenario, size the PMOS and NMOS transistors of CMOS logic gate F to have the same rise and fall resistance as unit inverter. (c) Find the logical effect gA and intrinsic delay p of CMOS logic gate F with respect to Input A.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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