Calculate the resistivity at 280 K for a Si sample doped with 2.12×1013 atoms per m of boron atoms. Assume that the impurities are completely ionized and the mobilities of electrons and holes are 1.5 m? Ns and 0.05 m2 N s respectively independent of impurity concentrations. The intrinsic carrier density of Si at 280K is 9.65×10° m³.

Delmar's Standard Textbook Of Electricity
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ISBN:9781337900348
Author:Stephen L. Herman
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Chapter1: Atomic Structure
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Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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Calculate the resistivity at 280 K for a Si sample doped with 2.12×1013 atoms
per m of boron atoms. Assume that the impurities are completely ionized and
the mobilities of electrons and holes are 1.5 m? Vs and 0.05 m2 N s
respectively independent of impurity concentrations. The intrinsic carrier
density of Si at 280K is 9.65×10° m³.
Transcribed Image Text:Calculate the resistivity at 280 K for a Si sample doped with 2.12×1013 atoms per m of boron atoms. Assume that the impurities are completely ionized and the mobilities of electrons and holes are 1.5 m? Vs and 0.05 m2 N s respectively independent of impurity concentrations. The intrinsic carrier density of Si at 280K is 9.65×10° m³.
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