Calculate built in potential of a germanium PN junction at 300K, if P-side is doped with \(5 \times 10^{16}\) acceptors/cm3 and N-side with \(5 \times 10^{14}\) donors/cm3, intrinsic carrier density \(n_i\)=\(2.5 \times 10^{13}\) /cm3.

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Calculate built in potential of a germanium PN junction at 300K, if P-side is doped with \(5 \times 10^{16}\) acceptors/cm3 and N-side with \(5 \times 10^{14}\) donors/cm3, intrinsic carrier density \(n_i\)=\(2.5 \times 10^{13}\) /cm3.

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