Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm " and Na = 1x10" cm" and (b) additional 6x10" cm ' of Nd? Note: use Effective density of conduction band = 2.8 x 10 " cm'. Effective density of valance band =1.04 x 10 " cm. T= 300 K, Boltzmann constant = 1.38x 10" Kg s*K'.

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Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4x10" cm * and Na = Ix10" cm * and (b) additional 6x10" cm of Nd? Note: use Effective density of
conduction band = 2.8 x 10 " cm . Effective density of valance band =1.04 x 10 cm. T= 300 K,
Boltzmann constant = 1.38x 10 Kg sK.
Transcribed Image Text:Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm * and Na = Ix10" cm * and (b) additional 6x10" cm of Nd? Note: use Effective density of conduction band = 2.8 x 10 " cm . Effective density of valance band =1.04 x 10 cm. T= 300 K, Boltzmann constant = 1.38x 10 Kg sK.
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