A silicon wafer of diameter D120 mm, and emissivity of 0.6 is at an initial temperature of Ti 325oC and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur 350C. What is the rate of cooling from the upper surface of the wafer? Properties of Air: k- 0.0373 W/m.C. v32.39*10-6 m2/s, alpha 47.210-6 m2s Pr 0.686. B- 1/Tf = 0.0022 K-1. Select one: O a. 344 W O b. 53 W O . 627 W O d. 86 W

Elements Of Electromagnetics
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Author:Sadiku, Matthew N. O.
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A silicon wafer of diameter D=120 mm. and emissivity of 0.6 is at an initial temperature of Ti 3250C and is allowed to
cool in quiescent, ambient air and large surroundings for which Tair Tsur = 350C. What is the rate of cooling from the
upper surface of the wafer? Properties of Air: k- 0.0373 W/m.C. v = 32.39*10-6 m2/s, alpha 47.210-6 m2/s Pr 0.686
B- 1/Tf = 0.0022 K-1.
Select one:
O a. 344 W
O b. 53 W
O c. 627 W
O d. 86 W
Transcribed Image Text:A silicon wafer of diameter D=120 mm. and emissivity of 0.6 is at an initial temperature of Ti 3250C and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur = 350C. What is the rate of cooling from the upper surface of the wafer? Properties of Air: k- 0.0373 W/m.C. v = 32.39*10-6 m2/s, alpha 47.210-6 m2/s Pr 0.686 B- 1/Tf = 0.0022 K-1. Select one: O a. 344 W O b. 53 W O c. 627 W O d. 86 W
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