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At the end of its manufacturing process, a silicon wafer of diameter d = 258 mm , thickness ô =1 mm is at an initial temperature of 325 C and is allowed to cool in quiescent, ambient air and large surroundings for which T =T= 25 C, What is the initial rate of cooling by convection (kJ/s) from the TOP surface ONLY (Watts)? 3 Silicon :p= 2330 kg/m , c = 813 J/kg · K, k= 87.8 W/m·K" 2 -6 Air: v = 32.15×10 m /s, k = 0.0372 W/m K, a = 46.8 ×10° m/s, Pr= 0.686 %3D Quiescent air T Tsur Silicon wafer D, 8, e, T

At the end of its manufacturing process, a silicon wafer of diameter d = 258 mm , thickness ô =1 mm is at an initial temperature of 325 C and is allowed to cool in quiescent, ambient air and large surroundings for which T =T= 25 C, What is the initial rate of cooling by convection (kJ/s) from the TOP surface ONLY (Watts)? 3 Silicon :p= 2330 kg/m , c = 813 J/kg · K, k= 87.8 W/m·K" 2 -6 Air: v = 32.15×10 m /s, k = 0.0372 W/m K, a = 46.8 ×10° m/s, Pr= 0.686 %3D Quiescent air T Tsur Silicon wafer D, 8, e, T

Elements Of Electromagnetics
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
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At the end of its manufacturing process, a silicon wafer of diameter d 258 mm , thickness & =1 mm is at an initial temperature of 325 C and is allowed to cool in quiescent, ambient air and large surroundings for which T =T= 25 C, What is the initial rate of cooling by convection (kJ/s) from the TOP surface ONLY (Watts)? Silicon :p= 2330 kg/m, c = 813 J/kg· K, k = 87.8 W/m· K. %3D -6 2 Air: v = 32.15x10° m /s, k = 0.0372 W/m K, a = 46.8 ×10 m /s, Pr 0.686 Quiescent air T Tsur Silicon wafer D, 8, e, T
Transcribed Image Text:At the end of its manufacturing process, a silicon wafer of diameter d 258 mm , thickness & =1 mm is at an initial temperature of 325 C and is allowed to cool in quiescent, ambient air and large surroundings for which T =T= 25 C, What is the initial rate of cooling by convection (kJ/s) from the TOP surface ONLY (Watts)? Silicon :p= 2330 kg/m, c = 813 J/kg· K, k = 87.8 W/m· K. %3D -6 2 Air: v = 32.15x10° m /s, k = 0.0372 W/m K, a = 46.8 ×10 m /s, Pr 0.686 Quiescent air T Tsur Silicon wafer D, 8, e, T
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