A hole current of 10-4 A/cm2 is injected into the side (x = 0) of a long N-silicon bar. Assuming that the holes flow only by diffusion, and that at very large values of x, the distribution of excess holes decays to zero. Determine: a)The steady-state excess hole density at χ = 0. b)Repeat part (a) at χ = ΙΟΟμm Given μp=400cm2/V-s, μs=1600cm2/V-s, and the lifetime of holes is 25 μs
A hole current of 10-4 A/cm2 is injected into the side (x = 0) of a long N-silicon bar. Assuming that the holes flow only by diffusion, and that at very large values of x, the distribution of excess holes decays to zero. Determine: a)The steady-state excess hole density at χ = 0. b)Repeat part (a) at χ = ΙΟΟμm Given μp=400cm2/V-s, μs=1600cm2/V-s, and the lifetime of holes is 25 μs
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A hole current of 10-4 A/cm2 is injected into the side (x = 0) of a long N-silicon bar. Assuming that the holes flow only by diffusion, and that at very large values of x, the distribution of excess holes decays to zero. Determine:
a)The steady-state excess hole density at χ = 0.
b)Repeat part (a) at χ = ΙΟΟμm
Given μp=400cm2/V-s,
μs=1600cm2/V-s, and the lifetime of holes is 25 μs
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